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Relation Between Tunnel Junction Quality, Anodization Profiles, and Low-Frequency Noise

  • H. Kohlstedt
  • S. Kuriki
  • T. Lehnert
  • D. Billon-Pierron
  • K.-H. Gundlach
Part of the Springer Proceedings in Physics book series (SPPHY, volume 64)

Abstract

Anodization profiles and low-frequency noise was investigated for low and high quality Nb-AlOx/Al-Nb (SIS) and, to our knowledge for the first time, for Al-AlOx/Al-Nb (SIN) tunnel junctions.

Our comparison shows a relation among the junction quality (determined by the Vm parameter [1], low frequency noise, and anodization profile.

Keywords

Power Spectral Density Tunnel Junction Noise Power Spectrum Tunnel Contact Junction Array 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • H. Kohlstedt
    • 1
  • S. Kuriki
    • 2
  • T. Lehnert
    • 3
  • D. Billon-Pierron
    • 3
  • K.-H. Gundlach
    • 3
  1. 1.Advantest Laboratories Ltd.Otaru, HokkaidoJapan
  2. 2.Research Institute of Applied ElectricityHokkaido-University060 SapporoJapan
  3. 3.Institut de Radioastronomie Millimètrique, Domaine UniversitaireFrance

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