Relation Between Tunnel Junction Quality, Anodization Profiles, and Low-Frequency Noise

  • H. Kohlstedt
  • S. Kuriki
  • T. Lehnert
  • D. Billon-Pierron
  • K.-H. Gundlach
Part of the Springer Proceedings in Physics book series (SPPHY, volume 64)


Anodization profiles and low-frequency noise was investigated for low and high quality Nb-AlOx/Al-Nb (SIS) and, to our knowledge for the first time, for Al-AlOx/Al-Nb (SIN) tunnel junctions.

Our comparison shows a relation among the junction quality (determined by the Vm parameter [1], low frequency noise, and anodization profile.


Power Spectral Density Tunnel Junction Noise Power Spectrum Tunnel Contact Junction Array 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • H. Kohlstedt
    • 1
  • S. Kuriki
    • 2
  • T. Lehnert
    • 3
  • D. Billon-Pierron
    • 3
  • K.-H. Gundlach
    • 3
  1. 1.Advantest Laboratories Ltd.Otaru, HokkaidoJapan
  2. 2.Research Institute of Applied ElectricityHokkaido-University060 SapporoJapan
  3. 3.Institut de Radioastronomie Millimètrique, Domaine UniversitaireFrance

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