Abstract
This paper describes the preparation and properties of various types of SIN devices: Pb/Bi/In-oxide-Ag junctions, evaporated through metal masks and three slightly different types of Nb/Al-based junctions, applying “trilayer-technique”, similar as for Nb-Aloxide-Nb SIS junctions. These three types are: Al(thick)-Alox/Al-Nbl, Nb-Alox-All(thick), Nb-Alox-Al(thick)-Nbl. We show the anodization profiles of these trilayers and compare experimental I–V characteristics with theory. Photon steps were observed at 370 GHz.
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present address: Advantest Laboratories Ltd, Otaru, 047-02 Hokkaido, Japan.
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Metal masks are fabricated by Dr. Johannes Heidenhain, G.m.b.H., 8225 Traunreut, Germany.
R. Blundell and K.H. Gundlach, unpublished results.
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© 1992 Springer-Verlag Berlin Heidelberg
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Lehnert, T., Gundlach, K.H., Kohlstedt, H. (1992). Lead/Bismuth- and Niobium-Based SIN Tunnel Junctions. In: Koch, H., Lübbig, H. (eds) Superconducting Devices and Their Applications. Springer Proceedings in Physics, vol 64. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77457-7_36
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DOI: https://doi.org/10.1007/978-3-642-77457-7_36
Publisher Name: Springer, Berlin, Heidelberg
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Online ISBN: 978-3-642-77457-7
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