Abstract
Transistor action with both voltage and current gain exceeding 1 was observed at 4.2 K in structures consisting of Nb electrodes, insulating barriers, and high-dielectric-constant insulating SrTiO3 substrates. Essentially no current was required to control the collector current, which ranged from a few microamperes to a few milliamperes.
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© 1992 Springer-Verlag Berlin Heidelberg
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Tamura, H., Yoshida, A., Takauchi, H., Hasuo, S. (1992). Transistor Action in Three-Terminal Structures Having Nb Electrodes on an Insulating SrTiO3 Substrate. In: Koch, H., Lübbig, H. (eds) Superconducting Devices and Their Applications. Springer Proceedings in Physics, vol 64. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77457-7_104
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DOI: https://doi.org/10.1007/978-3-642-77457-7_104
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