Abstract
We have calculated intensity of thermal and shot noise, and estimated that of the quantum noise, of single-electron transistors, capacitively and resistively coupled to the signal sources. Results of the calculations have been used to estimate the ultimate performance of those devices as ultrasensitive (sub-single-electron-charge) electrometers.
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© 1992 Springer-Verlag Berlin Heidelberg
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Korotkov, A.N., Averin, D.V., Likharev, K.K., Vasenko, S.A., Devoret, M. (1992). Single-Electron Transistors as Ultrasensitive Electrometers. In: Koch, H., Lübbig, H. (eds) Single-Electron Tunneling and Mesoscopic Devices. Springer Series in Electronics and Photonics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77274-0_4
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DOI: https://doi.org/10.1007/978-3-642-77274-0_4
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