Semiconductor-Coupled Superconducting Junctions — SNS in the Mesoscopic Regime

  • D. R. Heslinga
  • W. M. van Huffelen
  • T. M. Klapwijk
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 31)


A review is given of recent experiments with an emphasis on the development of a conceptual framework for superconductor-semiconductor- superconductor (SSmS) junctions. It is shown that these structures are best described as SNS (N=normal metal) with a potential barrier of variable strength at the interfaces, even in the absence of a Schottky barrier. When the barrier is highly transmissive Andreev reflection becomes important. Because the junction length is typically much shorter than the inelastic scattering length this leads to observable effects on the carrier statistics in Sm, viz. nonthermal electron energy distribution and subharmonic gap structure.


Schottky Barrier Andreev Reflection Specific Contact Resistance Excess Current Current Deficit 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • D. R. Heslinga
    • 1
  • W. M. van Huffelen
    • 1
  • T. M. Klapwijk
    • 1
  1. 1.Department of Applied Physics and Materials Science CentreUniversity of GroningenAG GroningenThe Netherlands

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