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Single-Electron Tunneling and Mesoscopic Devices pp 273–278Cite as

Printing-In Effect in NbN Granular Thin Films Caused by Electric Field

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Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 31))

Abstract

The effect of charge trapping in the field effect of the NbN granular ultrathin film is studied. The characteristics of the conductance variation at ~4.2K is found to be determined by the gate field initially applied at higher temperature. The thermal activation causes gradual change of the trapped charge. Laser light irradiation makes an activation different from the thermal effect.

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Author information

Authors and Affiliations

  1. Faculty of Engineering, Yokohama National University, Hodogaya, Yokohama, 240, Japan

    L. Zhang, N. Yoshikawa & M. Sugahara

Authors
  1. L. Zhang
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  2. N. Yoshikawa
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  3. M. Sugahara
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Editor information

Editors and Affiliations

  1. Physikalisch-Technische Bundesanstalt, Institut Berlin, Abbestrasse 2-12, W-1000, Berlin 10, Fed. Rep. of Germany

    Hans Koch  & Heinz Lübbig  & 

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© 1992 Springer-Verlag Berlin Heidelberg

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Zhang, L., Yoshikawa, N., Sugahara, M. (1992). Printing-In Effect in NbN Granular Thin Films Caused by Electric Field. In: Koch, H., Lübbig, H. (eds) Single-Electron Tunneling and Mesoscopic Devices. Springer Series in Electronics and Photonics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-77274-0_36

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  • DOI: https://doi.org/10.1007/978-3-642-77274-0_36

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-77276-4

  • Online ISBN: 978-3-642-77274-0

  • eBook Packages: Springer Book Archive

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