Advertisement

Implantation-Induced Modifications to Diamond-Related Materials

  • M. S. Dresselhaus
  • R. Kalish
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 22)

Abstract

Two families of man-made materials which are closely related to diamond have been developed recently, and the ion-induced effects relevant to these are mentioned here. The first, which was already grown ~20 years ago [9.1], are amorphous-hydrogenated carbon (a—C:H) (or, as sometimes called, diamondlike carbon, DLC) films and the second are the recently-developed man-made thin diamond films. Both of these are grown in the form of thin coatings from a plasma which contains a mixture of carbon and hydrogen ions. In the following, ion implantation studies in DLC are briefly reviewed. As for implantation effects in diamond films, hardly any data exist on these, probably because of the novelty of the material. However, from the available data [9.2] it seems that diamond films respond to ion implantation exactly like diamond single crystals do, at least as reflected in ion-induced changes in the electrical conductivity and in the Raman spectra.

Keywords

Electron Spin Resonance Electron Spin Resonance Signal Diamond Film Natural Diamond Hydrogen Release 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 9.1
    J. Alsenberg, R. Chabot: J. Appl. Phys. 42, 2953 (1971)ADSCrossRefGoogle Scholar
  2. 9.2
    S. Prawer, A. Hoffman, R. Kalish: Appl. Phys. Lett. 57, 2187 (1990)ADSCrossRefGoogle Scholar
  3. 9.3
    M.E. Adel: Ion and Laser Beam Induced Modifications of Diamond-hke Carbon Coatings. Dissertation, Israel Institute of Technology, Technion, Haifa (1989)Google Scholar
  4. 9.4
    R. Kalish, E. Adel: In Properties and Preparation of Amorphous Carbon Films, ed. by J.J. Pouch, S.A. Alterowitz (Trans Tech., Aedermannsdorf, Switzerland 1990) p.427Google Scholar
  5. 9.5
    R. Kalish: In Diamond and Diamond-Like Coatings, ed. by R.E. Clausing, L.L. Horton, J.C. Angus, P. Koidl (Plenum, New York 1991) p.447Google Scholar
  6. 9.6
    S. Prawer, R. Kalish, M.E. Adel, V. Richter: J. Appl. Phys. 61, 4492 (1987)ADSCrossRefGoogle Scholar
  7. 9.7
    D.C. Ingram, D.J. Ehrlich: J. Vac. Sci. Technol. B 4, 310 (1986)Google Scholar
  8. 9.8
    D.C. Ingram, A.W. Mormick: Nucl. Instr. Meth. Phys. Res. B 34, 68 (1988)ADSCrossRefGoogle Scholar
  9. 9.9
    M. Ramsteiner, J. Wagner: Appl. Phys. Lett. 51, 1355 (1987)ADSCrossRefGoogle Scholar
  10. 9.10
    I. Sela, M. Adel, R. Beserman: J. Appl. Phys. 68, 70 (1990)ADSCrossRefGoogle Scholar
  11. 9.11
    D.S. Knight, W.B. White: J. Mater. Res. 4, 385 (1989)ADSCrossRefGoogle Scholar
  12. 9.12
    J. Gonzales-Hernandez, R. Asomoza, A. Reyes-Mena, J. Richards, S.S. Chao, D. Pawlik: J. Vac. Sci. Technol. A6, 1798 (1988)ADSGoogle Scholar
  13. 9.13
    H. Baumann, T. Rupp, K. Bethge, P. Koidl, C. Wild: In Amorphous Hydrogenated Carbon Films, ed. by P. Koidl, P. Oelhafen (Les Editions de Physique, Paris 1987) p. 149Google Scholar
  14. 9.14
    M.E. Adel, O. Amir, R. Kalish, L.C. Feldman: J. Appi. Phys. 66, 3248 (1989)ADSCrossRefGoogle Scholar
  15. 9.15
    J.P.F. Sellschop, C.C.P. Madiba, H.J. Annegarn: Nucl. Instr. Meth. Phys. Res. 168, 529 (1980)CrossRefGoogle Scholar
  16. 9.16
    C. Wild, P. Koidl: Appl. Phys. Lett. 51 19 (1987)CrossRefGoogle Scholar
  17. 9.17
    W. Moeller, P. Børgesen, B.M.U. Scherzer: Nucl. Instr. Meth. Phys. Res. B19, 20, 826 (1987)CrossRefGoogle Scholar
  18. 9.18
    J.W. Zou, K. Schmidt, K. Reichelt, B. Stritzker: J. Vac. Sci. Tech. A 6, 3103 (1988)ADSGoogle Scholar
  19. 9.19
    F. Fujimoto, M. Tanaka, Y. Iwata, A. Ootuka, K. Komaki, M. Haba, K. Kobayashi: Nucl. Instr. Meth. Phys. Res. B 33, 792 (1988)ADSCrossRefGoogle Scholar
  20. 9.20
    M.E. Adel, R. Kalish, S. Prawer: J. Appl. Phys. 62, 4096 (1987)ADSCrossRefGoogle Scholar
  21. 9.21
    S.P. Wong, S. Peng: In Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, ed. by J.T. Glass, R.F. Messier, N. Fujimori. MRS Proc. 162, 383 (MRS, Pittsburgh 1990)Google Scholar
  22. 9.22
    O. Amir, R. Kalish: In Diamonds and Related Materials, ed. by P.K. Bachmann (Elsevier, New York 1992) Paper 7. 84Google Scholar
  23. 9.23
    O. Amir: Doping of a-C:H films by ion-implantation and during growth. M.Sc. Thesis, Technion, Haifa, Israel (1990)Google Scholar
  24. 9.24
    S.-C. Cheng, D. Fu, Z. Xu, H. Zhang, X.-Z. Pan: Nucl. Instr. Meth. Phys. Res. B 39, 692 (1989)ADSCrossRefGoogle Scholar
  25. 9.25
    D.R. Menzie, R.C. Mhedram, N. Savvides, D.J.H. Cockayne: Thin Solid Films 108, 247 (1983)ADSCrossRefGoogle Scholar
  26. 9.26
    J. Robertson, E.P. O’Reilly: Phys. Rev. B 35, 2946 (1987)ADSGoogle Scholar
  27. 9.27
    S. Prawer, R. Kalish: UnpublishedGoogle Scholar
  28. 9.28
    S. Yugo, T. Kimura, Y. Kazumata: Carbon 23, 147 (1985)CrossRefGoogle Scholar
  29. 9.29
    D.E. Soule, C.W. Nezbeda: J. Appl. Phys. 39, 5122 (1968)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • M. S. Dresselhaus
    • 1
  • R. Kalish
    • 2
  1. 1.Department of Electrical Engineering and Computer ScienceMassachusetts Institute of TechnologyCambridgeUSA
  2. 2.Solid State Institute and Physics DepartmentTechnion—Israel Institute of TechnologyHaifaIsrael

Personalised recommendations