Depth Resolved Diffuse Scattering from Buried CoSi2 Layers in Silicon
Buried single crystalline layers of CoSi2 in Si with (001) surfaces were produced by ion implantation. The CoSi2 is of pure A-type which until now cannot be produced by MBE for this surface orientation. X-ray experiments under grazing incidence conditions show that the transitions between the layers are rather extended and that only the inner parts of the layers are perfectly crystalline. The existence of large lattice distortions can be concluded from the diffuse scattering around the in-plane (220) reflection.
KeywordsElectrical Resistivity Density Profile Diffuse Scattering Surface Orientation Electron Density Profile
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