Electrical Resistance in Hydrogenated Nb Thin Films
The electrical resistivity of Nb films (50 to 100 nm thick) has been studied as a function of hydrogen pressure. The Nb films were covered with a small Pd overlayer. The resistivity change reaches saturation at about 15 Torr with a maximum increase of 8%.
Unable to display preview. Download preview PDF.
- 6.R. P. Volkova L. S. Palatnik and A. T. Pugachev. — Sov. Phys. Dokl. 26, 695 (1981).Google Scholar