Electrical Resistance in Hydrogenated Nb Thin Films

  • D. E. Azofeifa
  • N. Clark
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 62)

Abstract

The electrical resistivity of Nb films (50 to 100 nm thick) has been studied as a function of hydrogen pressure. The Nb films were covered with a small Pd overlayer. The resistivity change reaches saturation at about 15 Torr with a maximum increase of 8%.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • D. E. Azofeifa
    • 1
  • N. Clark
    • 1
  1. 1.Escuela de FísicaUniversidad de Costa RicaSan JoséCosta Rica

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