Abstract
The electrical resistivity of Nb films (50 to 100 nm thick) has been studied as a function of hydrogen pressure. The Nb films were covered with a small Pd overlayer. The resistivity change reaches saturation at about 15 Torr with a maximum increase of 8%.
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© 1992 Springer-Verlag Berlin Heidelberg
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Azofeifa, D.E., Clark, N. (1992). Electrical Resistance in Hydrogenated Nb Thin Films. In: Ponce, F.A., Cardona, M. (eds) Surface Science. Springer Proceedings in Physics, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-76376-2_45
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DOI: https://doi.org/10.1007/978-3-642-76376-2_45
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