Abstract
Room-temperature CW and pulsed lasing of top-surface-emitting, vertical-cavity, self-aligned, GaAs quantum-well lasers is achieved at ~845 nm. The active gain medium is four 100-Å-thick GaAs quantum wells. The whole structure is grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing is used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current is 2.2 mA for CW and pulsed operation using 10-jam diameter lasers. Differential quantum efficiency is about 20%. Minimum threshold current density per quantum well of 360 A/cm2 is obtained. Maximum CW output power better than 1.5 mW is obtained.
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Leel, Y.H., Tell, B., Brown-Goebeler, K., Jewell, J.L., Hove, J.M.V. (1990). Top-Surface-Emitting GaAs Four-Quantum-Well Lasers Emitting at 0.85 µm. In: Tada, K., Hinton, H.S. (eds) Photonic Switching II. Springer Series in Electronics and Photonics, vol 29. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-76023-5_31
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DOI: https://doi.org/10.1007/978-3-642-76023-5_31
Publisher Name: Springer, Berlin, Heidelberg
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