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Fabrication of MOSFETs on β-SiC Single Crystalline Layers Grown on Si(100) Substrates

  • H. Fuma
  • A. Miura
  • H. Tadano
  • S. Sugiyama
  • M. Takigawa
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

High temperature semiconductor devices are desirable for electronic control systems in automobiles. Silicon carbide is a promising semiconductor material for this purpose, because of its wide bandgap and physical stability[l]. Many devices fabricated in silicon carbide material have been reported[2–6]. Recently, a depletion-mode MOSFET, operating at 650°C, was reported by Palmour et al.[7]; this report demonstrates the high temperature capabilities of SiC devices.

Keywords

Gate Voltage Drain Voltage Electronic Control System High Temperature Capability Silicon Carbide Material 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Fuma
    • 1
  • A. Miura
    • 1
  • H. Tadano
    • 1
  • S. Sugiyama
    • 1
  • M. Takigawa
    • 1
  1. 1.Toyota Central Research & Development Labs., Inc.Aichi-gun, AichiJapan

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