Fabrication of MOSFETs on β-SiC Single Crystalline Layers Grown on Si(100) Substrates
High temperature semiconductor devices are desirable for electronic control systems in automobiles. Silicon carbide is a promising semiconductor material for this purpose, because of its wide bandgap and physical stability[l]. Many devices fabricated in silicon carbide material have been reported[2–6]. Recently, a depletion-mode MOSFET, operating at 650°C, was reported by Palmour et al.; this report demonstrates the high temperature capabilities of SiC devices.
KeywordsGate Voltage Drain Voltage Electronic Control System High Temperature Capability Silicon Carbide Material
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