Current Status of Diamond Thin Films

  • M. N. Yoder
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Abstract

Artifact (man made) diamond films are currently being made by several different types of plasma-assisted processes, hot filament processes, and even by conventional acetylene welding torches. Carbonaceous feed gases include methane, acetylene, carbon monoxide, various alcohols, and more recently, the effluent of city sewer plants. Most of these processes rely on atomic hydrogen to prevent the carbon atoms of the diamond surface from forming unwanted pi bonds and subsequent graphitic inclusions. While hydrogen has been thought to be essential to the growth of diamond, it is more recently thought to be the greatest impediment to the formation of contiguous, smooth, single crystalline diamond films. This unwanted aspect of hydrogen accrues from the inabilities of the growth processes to absolutely insure that ALL hydrogen terminations are subsequently replaced by carbon. Atomic layer epitaxy (ALE) may provide a solution as may chemical terminators other than hydrogen. While the use of lattice-matched substrates may be useful in seeding a continuous thin diamond film, carbide formation problems, the ability to withstand high temperature growth conditions, and thermal expansion coefficients are factors that must be considered when choosing the proper substrate.

Keywords

Nickel Methane Phosphorus Graphite Carbide 

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References

  1. 1.
    R. F. Davis, Z. Sitar, B. E. Williams, H. S. Kong, H. J. Kim, J. W. Palmour, J. A. Edmond, J. Ryu, J. T. Glass, C. H. Carter, Jr.: Matls. Sci. and Engr. B1, 77–104 (1988)CrossRefGoogle Scholar
  2. 2.
    M. N. Yoder: In Mat, Res Soc Proc Vol. 97 (1987) pp. 315–326CrossRefGoogle Scholar
  3. 3.
    M. N. Yoder: “Applications of Diamond Technology”; High Temperature Electronics Workshop, Albuquerque, NM (Apr 1988)Google Scholar
  4. 4.
    L. S. Pan, P. Pianetta, D. R. Kania: Paper W15; SDIO/IST-ONR Diamond Technology Initiative Svrnposium, Crvstal Citv, VA (July 1988)Google Scholar
  5. 5.
    G. S. Sandhu, M. L. Swanson, W. K. Chu: Paper W20; SDIO/IST-ONR Diamond Technology Initiative Svrnposium, Crystal City, VA (July 1988)Google Scholar
  6. 6.
    S.C. Rand, L.G. DeShazer: Opt. Ltrs, Vol. 10 10, 481–3 (1985)ADSGoogle Scholar
  7. 7.
    M. Yoder: Paper 969-14, 32 Annual SPIE International Technical Symposium, San Diego, CA (Aug 1988)Google Scholar
  8. 8.
    D. Wagman, et al: J. Phys. Chem., Ref. Data 11, Suppl. No. 2 (1982)Google Scholar
  9. 9.
    B. V. Spitsvn, L. L. Bouilov, B. V. Der. jaguin: J. Cryst. Growth, 5 2219 (1981)Google Scholar
  10. 10.
    G. Kubiak, A. Hamza, E. Sowa, M. Hove: Paper W12, SDIO/IST-ONR Diamond Technology Symposium, Crystal City, VA (Jul 1988)Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • M. N. Yoder
    • 1
  1. 1.Electronics DivisionOffice of Naval ResearchArlingtonUSA

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