Abstract
Studies of the time decay and power dependence of bound-exciton and donor-acceptor pair (DAP) photoluminescence (PL) have been carried out in n-type undoped and Al-doped films of cubic SiC. The five PL lines or shoulders occuring about 8 meV below the five-line nitrogen-boundexciton PL spectrum exhibit a time decay characteristic of donorbound-excitons. A weak DAP PL is found to dominate the low power CW with binding energy larger than the well known 54 meV donor.
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Freitas, J.A., Bishop, S.G., Klein, P.B., Nordquist, P.E.R., Gipe, M.L. (1989). Time-Resolved Photoluminescence Studies of Undoped and Al-Doped Cubic SiC. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_20
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DOI: https://doi.org/10.1007/978-3-642-75048-9_20
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