Preliminary Studies on the Interface Structures of CaF₂/Si(111)

Abstract

As a prototype of insulator-semiconductor interfaces, the epitaxial growth of CaF₂ on silicon is of much interest from both theoretical and experimental point of view. The high degree of lattice matching between the fluorite structure CaF₂ and the diamond structure Si crystal makes the growth of high quality crystalline epiiayers possible. Recently a number of experimental studies [1–5] have been devoted to properties of the interface, however, theoretical studies on microscopic structure of the interface CaF₂/Si(111) are still relatively scarce.