Abstract
While equilibrium defects are formed simply for thermodynamic reasons and can be controlled by prolonged annealing at the desired temperature, impurities (which may be present in silicon even at high concentrations because of the growth technique) cannot usually be removed by simple heat treatments.
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References
B.O. Kolbesen, A. Mülbauer: Solid State Electron. 25, 759 (1982)
W. Zulehner, D. Huber: Crystals 8, 1 (1982)
G.S. Oehrlein, J.W. Corbett: Mat. Res. Soc. Symp. Proc. 14, 107 (1983)
C. Plougoven, B. Leroy, J. Arhan, A. Lecuiller J. Appl. Phys. 49, 2711 (1978)
S.M. Hu: Appl. Phys. Lett. 48, 115 (1986)
S.M. Hu: J. Appl. Phys. 52, 3974 (1981)
V. Cazcarra, P. Zimino: J. Appl. Phys. 51, 4206 (1980)
W. Kaiser, H.L. Frisch, H. Reiss: Phys. Rev. 112, 1546 (1958)
D. Helmreich, E. Sirtl: In Semiconductor Silicon 1977, ed. by H.R. Huff, E. Sirtl (The Electrochem. Soc., Princeton NJ 1977), p. 626
P. Rava, H.C. Gatos, J. Lagowski: In Semiconductor Silicon 1977, ed. by H.R. Huff, R.J. Kriegler, Y. Takeishi (The Electrochem. Soc., Pennington NJ 1981), p. 232
G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961)
U. Gösele, T.Y. Tan: Appl. Phys. A 28, 79 (1982)
B. Bourret: Proc 13th Intl. Conf. Defects in Semiconductors (The Metallururgical Soc., Warrendale PA 1985) p. 129
A. Kanamori, M. Kanamori: J. Appl. Phys. 50, 8095 (1979)
Y. Matsushita: Proc 17th Intl. Conf. Physics of Semiconductors (1985) p. 1525
A. Bourret: Inst. Phys. Conf. Ser. 87, 39 (1987)
A. Bourret, J. Thibault-Desseaux, D.N. Seidman: J. Appl. Phys. 55, 825 (1984)
F. Shimura, R.A. Craven: In The Physics of VLSI, ed. by J.C. Knights (Am. Inst. Phys., New York 1984) p. 205
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© 1989 Springer-Verlag Berlin Heidelberg
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Cerofolini, G., Meda, L. (1989). Impurities. In: Physical Chemistry of, in and on Silicon. Springer Series in Materials Science, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73504-2_4
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DOI: https://doi.org/10.1007/978-3-642-73504-2_4
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-73506-6
Online ISBN: 978-3-642-73504-2
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