Strained Layer Epitaxy

  • L. C. Feldman
  • M. Zinke-Allmang
  • J. Bevk
  • H.-J. Gossmann
Conference paper
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 11)

Abstract

Strained layer epitaxy is a process for the formation of new materials with a strain and composition modulation in the one to one hundred monolayer range. Two aspects of epitaxial growth are discussed in this paper. We first consider the dynamics of the clustering process, a basic limitation in epitaxy, and show that the formation of clusters can be considered as an Ostwald ripening process. A second experiment examines the strain in few monolayer epitaxial films of Ge embedded in Si(100). We show that the strain in these monolayer films is comparable to that expected from bulk elastic constants.

Keywords

Assure Auger Channeling 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • L. C. Feldman
    • 1
  • M. Zinke-Allmang
    • 1
  • J. Bevk
    • 1
  • H.-J. Gossmann
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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