Abstract
The development of hot electron techniques and high mobility materials is one more step bringing electronics to the 100 GHz regime. With these new approaches come the problems of measuring device characteristics and performance. Several approaches have now been developed to observe high-speed electrical transients using the electro-optic technique [1]. In the case of many III–V compound semiconductors such as GaAs and InP, direct probing of the semiconductor substrate is possible. Such probing is potentially very useful as it allows for the noncontact noninvasive probing of devices and circuits. Noncontact measurements of devices and circuits have been made using compressed pulses from a cw mode-locked Nd:YAG laser [2]. This paper deals specifically with the use of compressed pulses for directly probing device and circuit substrates.
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References
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© 1987 Springer-Verlag Berlin Heidelberg
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Nees, J., Williamson, S. (1987). A Technique for Wing Suppressed IR Sampling. In: Leonberger, F.J., Lee, C.H., Capasso, F., Morkoc, H. (eds) Picosecond Electronics and Optoelectronics II. Springer Series in Electronics and Photonics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72970-6_7
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DOI: https://doi.org/10.1007/978-3-642-72970-6_7
Publisher Name: Springer, Berlin, Heidelberg
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