Abstract
The progress of semiconductor fabrication technology, particularly the hetero-epitaxial technology, has permitted the fabrication of devices whose behavior is dominated by quantum-interference effects. The most widely studied example of a quantum size-effect device is the resonant tunneling diode (RTD) [1,2]. This device exhibits interesting properties in the form of a negative-resistance region of its characteristic curve, and there are indications that its response time might be very short [2]. In the present work the RTD was taken as a prototype quantum device for the development of techniques for the analysis of such devices.
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© 1987 Springer-Verlag Berlin Heidelberg
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Frensley, W.R. (1987). Quantum Transport Calculation of Resonant-Tunneling Response Time. In: Leonberger, F.J., Lee, C.H., Capasso, F., Morkoc, H. (eds) Picosecond Electronics and Optoelectronics II. Springer Series in Electronics and Photonics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72970-6_23
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DOI: https://doi.org/10.1007/978-3-642-72970-6_23
Publisher Name: Springer, Berlin, Heidelberg
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