Atomic Structure of Semiconductor Surfaces

  • G. Le Lay
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 22)

Abstract

Many new experimental results and theoretical advances support a definite model for each peculiar surface structure of a given low index surface plane of silicon, of germanium and of a large variety of III-V covalent semiconductors. Even the most elusive reconstruction of silicon: Si (111) 7x7 seems now to be solved, thereby bringing a journey of a quarter century close to its end.

Keywords

Anisotropy Helium GaAs Expense Azimuth 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • G. Le Lay
    • 1
  1. 1.Campus de LuminyCRMC2-CNRSMarseille, Cedex 09France

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