Abstract
Two-quantum photoemission is a process in which twice the photon energy is transferred to the emitted photoelectron. In two-photon photoemission, this transfer is obtained by successive photoexcitations. The transit of the electron in an intermediate state gives to its final state a “memory” of this normally-empty state. We review here the experimental problems involved and the information obtained this way on the empty states of semiconductors. The present state of the art includes the- determination of static properties (density of states, dispersion,…) and dynamic ones (recombination or relaxation processes,…). Excited electrons can be probed along their relaxation path, from ballistic to relaxed behaviour by an adequate choice of experimental conditions. Finally, the surface and interface sensitivity of two-photon photoemission is evaluated.
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Moison, J.M. (1987). Two-Photon Photoemission in Semiconductors. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_19
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DOI: https://doi.org/10.1007/978-3-642-72967-6_19
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