Abstract
MeV ion backscattering and nuclear microanalysis are very sensitive tools which, coupled to Auger electron spectroscopy, provide quantitative information on elemental composition of solid surfaces. The channeling phenomenon enables the measurement of a few hundred’s of  displacements of atoms from lattice sites and the analysis of surface crystallographic structures, epitaxial layers and interface defects. The principles of such experiments are presented and examples are given which illustrate the possibilities of nuclear techniques in various domains related to surface physics.
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© 1987 Springer-verlag Berlin Heidelberg
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Cohen, C. (1987). Surface and Interface Studies with MeV Ion Beams. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_13
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DOI: https://doi.org/10.1007/978-3-642-72967-6_13
Publisher Name: Springer, Berlin, Heidelberg
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