Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer

  • Nabil Sahri
  • Tadao Nagatsuma
  • Taiichi Otsuji
  • Naofumi Shimizu
  • Makoto Yaita
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 63)

Abstract

A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

Keywords

Quartz GaAs Assure 

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1998

Authors and Affiliations

  • Nabil Sahri
    • 1
  • Tadao Nagatsuma
    • 1
  • Taiichi Otsuji
    • 2
  • Naofumi Shimizu
    • 2
  • Makoto Yaita
    • 1
  1. 1.NTT System Electronics LaboratoriesAtsugi, KanagawaJapan
  2. 2.NTT Optical Network Systems LaboratoriesYokosuka, KanagawaJapan

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