Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 63)
A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.
KeywordsQuartz GaAs Assure
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© Springer-Verlag Berlin Heidelberg 1998