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Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer

  • Nabil Sahri
  • Tadao Nagatsuma
  • Taiichi Otsuji
  • Naofumi Shimizu
  • Makoto Yaita
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 63)

Abstract

A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

Keywords

Device Under Test FDTD Simulation Coplanar Waveguide Transit Frequency Electrooptic Sampling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    T. Enoki, H. Ito, K. Ikuta and Y. Ishii, in Proc. 1995 Int’l. Conf. on IPRM, 81, 1995.Google Scholar
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    T. Otsuji, K. Murata, T. EnoM and Y. Umeda, in Tech. Dig. IEEE Gaas IC Symp., 183, 1997.Google Scholar
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    M. Y. Frankel, in Opt. Quantum Electron. 28, 783, 1996.CrossRefGoogle Scholar
  4. 4.
    N. Shimizu, N.Watanabe, T. Furuta and T. Ishibashi, in Tech. Dig. 55 th Annual Research Conf., 164, 1997.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1998

Authors and Affiliations

  • Nabil Sahri
    • 1
  • Tadao Nagatsuma
    • 1
  • Taiichi Otsuji
    • 2
  • Naofumi Shimizu
    • 2
  • Makoto Yaita
    • 1
  1. 1.NTT System Electronics LaboratoriesAtsugi, KanagawaJapan
  2. 2.NTT Optical Network Systems LaboratoriesYokosuka, KanagawaJapan

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