Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 63)
Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer
A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.
KeywordsDevice Under Test FDTD Simulation Coplanar Waveguide Transit Frequency Electrooptic Sampling
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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© Springer-Verlag Berlin Heidelberg 1998