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Noise in Microstructures

  • J. P. Nougier
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 13)

Abstract

Noise in devices is due to local random events, namely scattering mechanisms undergone by the carriers, which produce fluctuations of the current flow, and hence fluctuations of the voltage at the ends of the device. The knowledge of the noise is important mainly for two reasons: From a fundamental point of view, it gives information concerning the transport mechanisms (basic limitations such as the scattering mechanisms with phonons, etc., or technological limitations due to impurities, defects, etc.); from an applied point of view, noise is a fundamental limitation to the sensitivity of the device, so that it is important to study whether it can be lowered or not.

Keywords

Noise Source Shot Noise Solid State Electron Noise Current Noise Temperature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • J. P. Nougier
    • 1
  1. 1.Centre d’Electronique de Montpellier, (Laboratoire associé au CNRS, UA 391)Université des Sciences et Techniques du LanguedocMontpellier CédexFrance

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