Abstract
A field effect transistor (FET) is a semiconductor device in which the current between two contacts — source and drain — is controlled by the voltage on a third contact — the gate. The role of such devices in electronic circuits is simple in principle. In logic circuits it functions as a switch — depending on the gate voltage the connection between source and drain is broken or closed — and in analogue circuits a small time-varying signal on the gate yields a time-varying current between source and drain, and since the gate current ideally is purely a displacement current, a very small input power can be amplified.
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© 1986 Springer-Verlag Berlin Heidelberg
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Vinter, B. (1986). The Two-Dimensional Electron Gas Field Effect Transistor. In: Allan, G., Lannoo, M., Bastard, G., Voos, M., Boccara, N. (eds) Heterojunctions and Semiconductor Superlattices. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71010-0_19
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DOI: https://doi.org/10.1007/978-3-642-71010-0_19
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