Optoelectronic Modulation of Millimeter Waves in a Silicon-on-Sapphire Waveguide

  • Chi H. Lee
  • Aileen M. Yurek
  • M. G. Li
  • E. A. Chauchard
  • R. P. Fischer
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

Recently a great deal of attention has been given to a general class of switching and gating devices based on the photoconductivity effect using picosecond optical pulses. The photoconductivity effect is a long wavelength limit of a more general phenomenon, in which the complex dielectric constant of a semiconductor is modified by the introduction of an optically induced electron-hole plasma. A millimeter-wave propagating in a semiconductor waveguide experiences both attenuation and phase-shift when an electron-hole plasma is optically induced in the waveguide.

Keywords

Attenuation Recombination GaAs Sapphire allO 

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References

  1. [1]
    Chi H. Lee, Aileen M. Yurek, M. G. Li and C. D. Striffler: 9th International Conference on Infrared and Millimeter-Waves, Osaka, Japan, Oct. 22–26, 1984, pp. 495–498, Conference Digest.Google Scholar
  2. [2]
    Aileen M. Yurek (Vaucher): Ph.D thesis, University of Maryland 1984.Google Scholar
  3. [3]
    Chi H. Lee: Chapter 5 in Picosecond Optoelectronic Devices, edited by Chi H. Lee, Academic Press, 1984.Google Scholar
  4. [4]
    Loferski Proc. IEEE 63, 669, 1963.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • Chi H. Lee
    • 1
  • Aileen M. Yurek
    • 1
  • M. G. Li
    • 1
  • E. A. Chauchard
    • 1
  • R. P. Fischer
    • 1
  1. 1.Electrical Engineering DepartmentUniversity of MarylandCollege ParkUSA

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