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Electric Field-Induced Decrease of Excition Lifetimes in GaAs Quantum Wells

  • J. A. Kash
  • E. E. Mendez
  • H. Morkoç
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

Previously[1], the c.w. photoluminescence (PL) at helium temperatures for excitons confined in quantum wells has been seen to decrease sharply (i.e. is quenched) when an electric field is applied perpendicular to the layers. It was suggested there that the decrease might be due to spatial separation of the electrons and holes under the influence of the electric field. The electron-hole spatial overlap is reduced by the separation, thus increasing the exciton radiative lifetime. We have measured the exciton PL decay directly in order to examine the luminescence quenching in more detail.

Keywords

Schottky Diode Luminescence Decay Time Exciton Density Exciton Lifetime Pulse Energy Incident 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    E. E. Mendez, G. Bastard, L. L. Chang, L. Esaki, H. Morkoc, and R. Fischer, Phys. Rev. B26, 7101 (1982).Google Scholar
  2. 2.
    J. A. Kash, J. H. Collet, D. J. Wolford, and J. Thompson, Phys. Rev. B27, 2294 (1983).Google Scholar
  3. 3.
    R. A. Smith, Wave Mechanics of Crystalline Solids, Second Edition, (Chapman and Hall, London, 1969), p. 60.Google Scholar
  4. 4.
    G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, Phys. Rev. B28, 3241 (1983).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • J. A. Kash
    • 1
  • E. E. Mendez
    • 1
  • H. Morkoç
    • 2
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA
  2. 2.University of Illinois at Urbana-ChampaignUrbanaUSA

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