Electric Field-Induced Decrease of Excition Lifetimes in GaAs Quantum Wells
Previously, the c.w. photoluminescence (PL) at helium temperatures for excitons confined in quantum wells has been seen to decrease sharply (i.e. is quenched) when an electric field is applied perpendicular to the layers. It was suggested there that the decrease might be due to spatial separation of the electrons and holes under the influence of the electric field. The electron-hole spatial overlap is reduced by the separation, thus increasing the exciton radiative lifetime. We have measured the exciton PL decay directly in order to examine the luminescence quenching in more detail.
KeywordsRecombination Helium GaAs Deconvolution
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