Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Arthur, J.R., Jr. Surface stoichiometry and structure of Ga As Surf. Sci. 43 449 - 461 (1974)
Chang, L.L., Esaki, L., Segmueller, A., Tsu, R. Resonant electron transport in semiconductor barrier Structures F’roc. 12th Int. Conf. Phys. Semicond., Stuttgart, Germany, July 15–19, 1974 (Teubner, Stuttgart, 1974) 688 – 692 (1974)
Chang, L.L., Esaki, L., Tsu, R. Resonant tunneling in semiconductor double barriers Appl. Phys. Lett. 24 593 - 595 (1974)
Cho, A.Y., Casey, H.C., Jr. Ga As A1xGal xAs double heterostructure laser prepared by molecular beam epitaxy Appl. Phys. Lett. 35 288 - 290 (1974)
Cho, A.Y., Casey, H.C., Jr. Properties of Schottky barriers and p-n junctions prepared with Ga As and A1xGal-xAs molecular epitaxial layers J. Appl. Phys. 45 1258 - 1263 (1974)
Cho, A.Y., Dunn, C.N., Kuvas, R.L., Schroeder, W.E. Ga As IMPATT diodes prepared by molecular beam epitaxy Appl. Phys. Lett. 25 224 - 226 (1974)
Cho, A.Y., Reinhart, F.K. Interface and doping profile characteristics with molecular beam epitaxy of Ga As: Ga As voltage varactor J. Appl. Phys. 45 1812–1817 (1974)
Dingle, R., Niegmann, W., Henry, C.H. Quantum states of confined carriers in very thin A1xGal-xAs-Ga As-AlxGal-xAs heterostructures Phys. Rev. Lett. 33 827 - 830 (1974)
Esaki, L. R Computer-control led molecular beam epitaxy Proc. 6th Int. Vacuum Congr., Jpn. J. Appl. Phys. Suppi. 2, Pt. 1 821–828 (1974)
Esaki, L. R Long journey into tunneling Rev. Mod. Phys. 46 237 – 244 (1974)
Esaki, L. R Long journey into tunneling Proc. IEEE 62 825 – 831 (1974)
Esaki, L. R Long journey into tunneling Science 183 1149–1155 (1974)
Esaki, L. Computer-controlled molecular beam epitaxy Buturi 43 452–460 (1974)
Esaki, L. R Computer-control led molecular beam epitaxy Proc. 6th Int. Vacuum Congr., Jpn. J. Appl. Phys. Suppi. 2, Pt. 1 821–828 (1974)
Esaki, L., Chang, L. L. New transport phenomenon in a semiconductor “superlattice” Phys. Rev. Lett. 33 495–498 (1974)
Farrow, R. F. C. Growth of indium phosphide films from In and P2 beams in ultra-high vacuum J. Phys. D 7 L121–L124 (1974)
Foxon, C. T., Boudry,M. R., Joyce,B. A. Evaluation of surface kinetic data by the transform analysis of modulated beam measurements Surf. Sci. 44 69–92 (1974)
Foxon, C. T., Joyce,B. A., Farrow,R. F. C., Griffiths,R.M. The identification of species evolved in the evaporation of III-V compounds J. Phys. D 7 2422–2435 (1974)
Hottmann,H., Schulz,M. Reflection splitting in RHEED investigations of vacuum evaporated Ga As layers Krist. Technik 9 661–673 (1974)
Joyce,B. A. R The growth and structure of semi conducting thin films Rep. Prog. Phys. 37 363–420 (1974)
Ludeke, R., Esaki, L. Electron energy-loss spectroscopy of Ga As and Ge surfaces Phys. Rev. Lett. 33 653–656 (1974)
Ludeke, R., Esaki, L., Chang, L. L. Ga(1-x)A1 (x)As super1attices profiled by Auger electron spectroscopy Appl. Phys. Lett. 24 417–419 (1974)
Nagnuma, M., Takahashi, K. Impurity doping effect of molecular-beam epitaxial Ga As films Trans. Inst. ELectr. Eng. Jpn. 94, No. 5 29–36 (1974)
Rosin, H., Schulz, M. Die Praeparation von Ga As-Substraten, untersucht mit Reflexionselektroneninterferenzen Krist. Technik 9 905–912 (1974)
Shik, A. Y. R Superlattices–periodic semiconductor structures Sov. Phys. Semicond. 8 (1975) 1195–1209
R Superlattices–periodic semiconductor structures Sov. Phys. Semicond Fiz. Tekh. Poluprov. 8 1841–1864 (1974)
Tsu, R., Janak, J. Magnetic quantization in a super lattice Phys. Rev. B9 404–408 (1974)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1984 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Ploog, K., Graf, K. (1984). Subject Categories and References Year 1974. In: Molecular Beam Epitaxy of III–V Compounds. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69580-3_6
Download citation
DOI: https://doi.org/10.1007/978-3-642-69580-3_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-13177-9
Online ISBN: 978-3-642-69580-3
eBook Packages: Springer Book Archive