Subject Categories and References Year 1981

  • Klaus Ploog
  • Klaus Graf

Keywords

Entropy Microwave Recombination Fluoride GaAs 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 509.
    Abstreiter, G., Zeller, C., Ploog, K. Study of GaAs-Al(x)Ga(1-x) As multilayer systems by resonant inelastic light scattering techniques Inst. Phys. Conf. Ser. 56 741–749 (1981)Google Scholar
  2. 510.
    Afsar, M.N., Button, K.J., Cho, A.Y., Morkoc, H. Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds Int. J. Infrared Millimeter Waves 2 1113–1121 (1981)ADSGoogle Scholar
  3. 511.
    Alferov, Z.I., Ber, B.Y., Kop’ev, P.S., Mel’tser, B.Y., Minchev, G.M. Synthesis of GaAs and Al(x)Ga(1-x) As films by molecular-beam epitaxy Sov. Tech. Phys. Lett. 6 1–2 (1981)Google Scholar
  4. Alferov, Z.I., Ber, B.Y., Kop’ev, P.S., Mel’tser, B.Y., Minchev, G.M. Synthesis of GaAs and Al(x)Ga(1-x) As films by molecular-beam epitaxy Pis’ma Zh. Tekh. Fiz. 7 3–5 (1981)Google Scholar
  5. 512.
    Alvarado, S.F., Ciccacci, F., Campagna, M. GaAs-AlxGal-xAs superlattices as sources of polarized photoelectrons Appl. Phys. Lett. 39 615–617 (1981)ADSGoogle Scholar
  6. 513.
    Alvarado, S.F., Ciccacci, F., Valeri, S., Campagna, M., Feder, R., Pleyer, H. Spin polarized photoemission from molecular beam epitaxy-grown Be-doped GaAs Z. Phys. B 44 259–264 (1981)ADSGoogle Scholar
  7. 514.
    Alvarado, S.F., Hopster, H., Feder, R., Pleyer, H. T Spin-orbit effects in LEED form Ni(001): experiment and theory Solid State Commun. 39 1319–1322 (1981)ADSGoogle Scholar
  8. 515.
    Andersson, T.G., Svensson, S.P. Temperature dependence of electron loss spectra from MBE-grown GaAs(001) Surf. Sci. 110 L578–L582 (1981)Google Scholar
  9. 516.
    Andersson, T.G., Svensson, S.P. The initial growth of Au on GaAs(001)-c(4X4) Surf. Sci. 110 L583–L586 (1981)ADSGoogle Scholar
  10. 517.
    Ando, T. T Magnetic Quantization and transport in a semiconductor superlattice in “Physics in High Magnetic Fields”, Eds. S. Chikazumi and M. Miura, Springer Ser. Solid State Sci. Vol. 24 301–304 (1981)Google Scholar
  11. 518.
    Ando, T. T Electronic properties of a semiconductor superlattice.III.Energy levels and transport in magnetic fields J. Phys. Soc. Jpn. 50 2978–2984 (1981)ADSGoogle Scholar
  12. 519.
    Aoki, H., Ando, T. T Effect of localization on the Hall conductivity in the two-dimensional system in strong magnetic fields Solid State Commun. 38 1079–1082 (1981)ADSGoogle Scholar
  13. 520.
    Asahi, H., Kawamura, Y., Ikeda, M., Okamoto, H. Moleculaf-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties J. Appl. Phys. 52 2852–2859 (1981)ADSGoogle Scholar
  14. 521.
    Asahi, H., Kawamura, Y., Ikeda, M., Okamoto, H. Near room temperature CW operation at 1.70 um of MBE grown InGaAs/InP DH lasers Jpn. J. Appl. Phys. 20 L187–L190 (1981)ADSGoogle Scholar
  15. 522.
    Asbeck, P.M., Miller, D.L., Milano, R.A., Harris, J.S., Jr., Kaelin, G.R., Zucca, R. (Ga, Al)As/GaAs bipolar transistors for digital integrated circuits IEDM 81 Technical Digest 629–632 (1981)Google Scholar
  16. 523.
    Bachrach, R.Z., Bauer, R.S., Chiaradia, P., Hansson, G.V. Surface phases of GaAs(100) and AlAs(100) J. Vac. Sci. Technol. 18 797–801 (1981)ADSGoogle Scholar
  17. 524.
    Bachrach, R.Z., Bauer, R.S., Chiaradia, P., Hansson, G.V. Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio J. Vac. Sci. Technol. 19 335–343 (1981)ADSGoogle Scholar
  18. 525.
    Bachrach, R.Z., Krusor, B.S. Morphological defects arising during MBE growth of GaAs J. Vac. Sci. Technol. 18 756–764 (1981)ADSGoogle Scholar
  19. 526.
    Ballingall, J.M., Stall, R.A., Wood, C.E.C., Eastman, L.F. Electron transport across the aprupt Ge-GaAs n-n heterojunction J. Appl. Phys. 52 4098–4103 (1981)ADSGoogle Scholar
  20. 527.
    Baraff, G.A., Tsui, D.C. Explanation of quantized-Hall-resistance plateaus in heterojunction inversion layers Phys. Rev. B 24 2274–2277 (1981)ADSGoogle Scholar
  21. 528.
    Barnard, J.A., Ohno, H., Wood, C.E.C., Eastman, L.F. Integrated double heterostructure Ga(0.47) In (0.53) As photoreceiver with automatic gain control IEEE Electron Device Lett. EDL-2 7–9 (1981)Google Scholar
  22. 529.
    Barnard, J.A., Wood, C.E.C., Eastman, L.F. Resistivity increase in MBE GaO. 47InO. 53 As following ion bombardment IEEE Electron Device Lett. EDL-2 193–195 (1981)Google Scholar
  23. 530.
    Bastard, G. T Hydrogenic impurity states in a quantum wells A simple model Phys. Rev. B 24 4714–4722 (1981)ADSGoogle Scholar
  24. 531.
    Bastard, G. T Superlattice band structure in the envelope-function approkimation Phys. Rev. B 24 5693–5697 (1981)ADSGoogle Scholar
  25. 532.
    Basu, P.K., Nag, B.R. T Piezoelectric scattering in quantised surface layers in semiconductors J. Phys. C 14 1519–1522 (1981)ADSGoogle Scholar
  26. 533.
    Blanchet, R.C., Delhomme, B.J., Urgell, J.J. Schottky diodes showing the effects of various in situ GaAs treatments in molecular beam epitaxy (MBE) Inst. Phys. Conf. Ser. 56 613–620 (1981)Google Scholar
  27. 534.
    Board, K., Chandra, A., Wood, C.E.C., Judaprawira, S., Eastman, L.F. T Characteristics of planar doped FET structures IEEE Trans. Electron Devices ED-28 505–510 (1981)Google Scholar
  28. 535.
    Bouchaib, P., Contour, J.P., Raymond, F., Verie, C., D’Avitaya, F.A. Use of molecular beam epitaxy for the achievement of low resistance intercell contacts in multiband gap solar cells J. Vac. Sci. Technol. 19 145–147 (1981)ADSGoogle Scholar
  29. 536.
    Brenac, A. R L’epitaxie par jets moleculaires Rev. Polytech. (Suisse) 8bis No. 1414 1144–1147 (1981)Google Scholar
  30. 537.
    Brenac, A. R L’epitaxie par jets moleculaires Recherches 104 3–14 (1981)Google Scholar
  31. 538.
    Calawa, A.R. On the use of AsH3 in the molecular beam epitaxial growth of GaAs Appl. Phys. Lett. 38 701–703 (1981)ADSGoogle Scholar
  32. 539.
    Capasso, F., Logan, R.A., Tsang, W.T., Hayes, J.R. Channeling photodiodes A new versatile interdigitated p-n junction photodetector Appl. Phys. Lett. 41 944–946 (1981)ADSGoogle Scholar
  33. 540.
    Carter, C.B., Wood, C.E.C., Roberts, J.S. Glide of dissociated dislocations in III-V compounds Appl. Phys. Lett. 38 805–807 (1981)Google Scholar
  34. 541.
    Chai, Y.G., Chow, R. Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy Appl. Phys. Lett. 38 796–798 (1981)Google Scholar
  35. 542.
    Chai, Y.6-, Chow, R., Wood, C.E.C. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs Appl. Phys. Lett. 39 800–803 (1981)Google Scholar
  36. 543.
    Chaikovskii, I.A., Shmelev, G.M., Enaki, N.A. T Light absorption in semiconductors with superlattice in quantizing magnetic field Phys.Status Solidi B 108 559–566 (1981)Google Scholar
  37. 544.
    Chang, C.A., Chu, W.K., Mendez, E.E., Chang, L-L., Esaki, L. Molecular beam epitaxy of Ge-GaAs super1 attices J. Vac. Sci. Technol. 19 567–570 (1981)ADSGoogle Scholar
  38. 545.
    Chang, C. A., Heiblum, M., Ludeke, R., Nathan, M. I. Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface Appl. Phys. Lett. 39 229–231 (1981)Google Scholar
  39. 546.
    Chang, C.A., Heiblum, H., Nathan, M.I. Monolayer-Sn technique for solving the substrate-film interface high-resistance problem in molecular beam epitaxy IBM Tech. Disclosure Bull. 24 1969 (1981)Google Scholar
  40. 547.
    Chang, C.A., Segmueller, A., Chang, L.L., Esaki, L. Ge-GaAs superlattices by molecular beam epitaxy Appl. Phys. Lett. 38 912–914 (1981)Google Scholar
  41. 548.
    Chang, L.L., Kawai, N.J., Mendez, E.E., Chang, C.A., Esaki, L. Semimetallic InAs-GaSb super1attices to the heterojunction limit Appl. Phys. Lett. 38 30–32 (1981)Google Scholar
  42. 549.
    Chang, L.L., Sai-Halasz, 6.A., Esaki, L., Aggarwal, R.L. Spatial separation of carriers in InAs-GaSb superlattices J. Vac. Sci. Technol. 19 589–591 (1981)Google Scholar
  43. 550.
    Chen, C.Y., Cho, A.Y., Garbinski, P.A., Bethea, C.G. An ultahigh speed modulated barrier photodiode made on p-type gallium arsenide substrates IEEE Electron Device Lett. EDL-2 290–292 (1981)Google Scholar
  44. 551.
    Chen, C.Y-, Cho, A.Y., Garbinski, P.A-, Bethea, C.G., Levine, B.F. Modulated barrier photodiodes: A new majority-carrier photodetector Appl Rhys. Lett. 39 340–342 (1981)Google Scholar
  45. 552.
    Cheng, K-Y-, Cho, A.Y., Bonner, W.A. Beryllium doping in GaO.47InO.53As and A10.48In0.52 As grown by molecular beam epitaxy J. Appl. Phys. 52 4672–4675 (1981)ADSGoogle Scholar
  46. 553.
    Cheng, K-Y-, Cho, A.Y-, Wagner, W.R. Molecular beam epitaxial growth of uniform GaO.47InO.53As with a rotating sample holder Appl. Phys. Lett. 39 607–609 (1981)Google Scholar
  47. 554.
    Cheng, K-Y-, Cho, A-Y., Wagner, W.R. Tin doping in Ga0.47In0.53As and A10.48In0.52As grown by molecular beam epitaxy J. Appl. Phys. 52 6328–6330 (1981)ADSGoogle Scholar
  48. 555.
    Cheng, K-Y-, Cho, A-Y-, Wagner, W.R., Bonner, W.A. Molecular beam epitaxial growth of uniform InO.53GaO.47As on InP with a coaxial In-Ga oven J. Appl. Phys. 52 1015–1021 (1981)ADSGoogle Scholar
  49. 556.
    Cho, A-Y-, Cheng, K-Y Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devices Appl. Phys. Lett. 38 360–362 (1981)Google Scholar
  50. 557.
    Combescot, M., Benoit a la Guillaume, C. T Two-dimensional electrons-holes droplets in superlattices Solid State Commun. 39 651–654 (1981)Google Scholar
  51. 558.
    Das Sarma, S., Madhukar, A. T Collective modes of spatially separated, two-component, two-dimensional plasma in solids Phys. Rev. B 23 805–815 (1981)Google Scholar
  52. 559.
    Davies, G.J., Andrews, D.A., Heckingbottom, R. Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy J. Appl. Phys. 52 7214–7218 (1981)ADSGoogle Scholar
  53. 560.
    Day, D.S., Oberstar, J-D-, Drummond, T.J-, Morkoc, H., Cho, A.Y-, Streetman, B. G. Electron traps created by high temperature annealing in MBE n-GaAs J. Electron. Mater. 10 445–453 (1981)ADSGoogle Scholar
  54. 561.
    Delagebeaudeuf, D., Linh, N.T. T Charge control of the heterojunction two-dimensional electron gas for MESFET application IEEE Trans- Electron Devices ED-28 790–795 (1981)Google Scholar
  55. 562.
    Delescluse, P., Laviron, M., Chaplart, J., Delagebeaudeuf, D., Linh, N.T. Transport properties in 6a1As~Al(x)Ga(1-x)As heterostructures and MESFET application Electron. Lett. 17 342–344 (1981)Google Scholar
  56. 563.
    Doehler, G.H. R Semi conductor superlattices - a new material for research and applications Phys. Scr. 24 430–439 (1981)Google Scholar
  57. 564.
    Doehler, G. H., Kuenzel, H., O1ego, D., Ploog, K., Ruden, P., Stolz, H.J., Abstreiter, G. Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattices Phys. Rev. Lett. 47 864–867 (1981)Google Scholar
  58. 565.
    Drummond, T.J., Keever, M., Kopp, W., Morkoc, H., Hess, K., Streetman, B.G., Cho, A.Y. Field dependence of mobility in Al0.2GaO.8As/GaAs heterojunctions at very low fields Electron. Lett. 17 545–547 (1981)Google Scholar
  59. 566.
    Drummond, T. iI., Kopp, W., Morkoc, H. Three period (Al, Ga)As/GaAs heterostructures with extremely high mobilities Electron. Lett. 17 442–444 (1981)Google Scholar
  60. 567.
    Drummond, T.J., Kopp, W., Morkoc, H., Hess, K., Cho, A.Y., Streetman, B.G. Effect of background doping on the electron mobility of (Al, Ga)As/GaAs heterostructures J. Appl. Phys. 52 5689–5690 (1981)ADSGoogle Scholar
  61. 568.
    Drummond, T.J., Morkoc, H., Cho, A.Y. Dependence of electron mobility on spatial separation of electrons and donors in AlxGal-xAs/Ga As heterostructures J. Appl. Phys. 52 1380–1386 (1981)Google Scholar
  62. 569.
    Drummond, T.J., Morkoc, H., Hess, K., Cho, A.Y. Experimental and theoretical electron mobility of modulation doped AlxGal-xAs/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. 52 5231–5234 (1981)Google Scholar
  63. 570.
    Drummond, T.J., Morkoc, H., Su, S.L., Fischer, R., Cho, A.Y. Enhanced mobility in inverted AlxGal-xAs/GaAs heterojunctionss Binary on top of ternary Electron. Lett. 17 870–871 (1981)Google Scholar
  64. 571.
    Duggan, G., Scott, G.B., Foxon, C.T., Harris, J.J. Photoluminescence technique for the determination of minority-carrier diffusion length in GaAs grown by molecular beam epitaxy Appl. Phys. Lett. 38 246–248 (1981)Google Scholar
  65. 572.
    Duhamel, N., Henoc, P., Alexandre, F., Rao, E.V.K. Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers Appl. Phys. Lett. 39 49–51 (1981)Google Scholar
  66. 573.
    Eastman, L.F. Experimental studies of ballistic transport in semi conductors J. Physique 42 Colloque C 7 C7/263–C7/269 (1981)Google Scholar
  67. 574.
    Eastman, L.F., Stall, R.A., Woodard, D.N., Wood, C.E.C., Dandekar, N., Shur, M.S., Hollis, M., Board, K. Ballistic electron transport in thin layers of GaAs Inst. Phys. Conf. Ser. 56 185–192 (1981)Google Scholar
  68. 575.
    Esaki, L. InAs-GaSb superlattices - synthesized semiconductors and semi metals J. Cryst. Growth 52 227–240 (1981)ADSGoogle Scholar
  69. 576.
    Esaki, L., Chang, L.L., Hendez, E.E. Polytype super1attices and multi-heterojunctions Jpn. J. Appl. Phys. 20 L529–L532 (1981)ADSGoogle Scholar
  70. 577.
    Farrow, R.F.C. The use of ion beams in molecular beam epitaxy Thin Solid Films 80 197–211 (1981)Google Scholar
  71. 578.
    Farrow, R.F.C. Recent european developments in MBE J. Vac. Sci. Technol. 19 150–156 (1981)ADSGoogle Scholar
  72. 579.
    Farrow, R.F.C., Jones, G.R., Wil1iams, G.M., Young, I.M. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InP(001) Appl. Phys. Lett. 39 954–956 (1981)Google Scholar
  73. 580.
    Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Jones, G.R., Cameron, D.C. MBE-grown fluoride filmss A new class of epitaxial dielectrics J. Vac. Sci. Technol. 19 415–420 (1981)ADSGoogle Scholar
  74. 581.
    Ferry, D.K. Charge instabilities in lateral super-lattices under conditions of population inversion Phys. Status Solidi B 106 63–71 (1981)ADSGoogle Scholar
  75. 582.
    Foxon, C.T. R Molecular beam epitaxy - surface and kinetic effects CRC Crit. Rev. Solid State & Mater. Sci. 10 235–242 (1981)Google Scholar
  76. 583.
    Foxon, C.T., Joyce, B.A. R Fundamental aspects of molecular beam epitaxy in “Current Topics in Materials Science”, Ed. E. Kaldis, Vol. 7 (North-Hoi 1 and, Amsterdam/New York, 1981) 1–68 (1981)Google Scholar
  77. 584.
    Gaponov, S.V., Luskin, B.M., Salashchenko, N.N. Homoepitaxial super1attices with nonoriented barrier layers Solid State Commun. 39 301–302 (1981)Google Scholar
  78. 585.
    Gornik, E., Schawarz, R., Tsui, D.C., Gossard, A.C., Wiegmann, W. Far infrared emission from 2D electrons at the GaAs-AlxGal-xAs interface Solid State Commun. 38 541–545 (1981)Google Scholar
  79. 586.
    Gotoh, H., Suga, T., Suzuki, H., Kimata, M. Low temperature growth of gallium nitride Jpn. J. Appl. Rhys. 20 L545–L54S (1981)ADSGoogle Scholar
  80. 587.
    Harris, J.J., Joyce, B.A. Comments on “RED intensity oscillations during MBE of GaAs” Surf. Sci. 108 L444–L446 (1981)Google Scholar
  81. 588.
    Harris, J.J., Joyce, B.A., Dobson, P.J. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE Surf. Sci. 103 L90–L96 (1981)Google Scholar
  82. 589.
    Haydl, W.H. Harmonic operation of GaAs millimetre wave transferred electron oscillators Electron. Lett. 17 825–826 (1981)Google Scholar
  83. 590.
    Hess, K. R Lateral transport in super1attices J. Physique 42 Colloque C7 C7/3–C7/17 (1981)Google Scholar
  84. 591.
    Hikosaka, K., Mimura, T., Joshin, K. Selective dry etching of AlGaAs-GaAs heterojunction Jpn. J. Appl. Phys. 20 L847–L850 (1981)ADSGoogle Scholar
  85. 592.
    Hiyamizu, S., Fujii, T., Mimura, T., Nanbu, K., Saito, J., Hashimoto, H. The effect of growth temperature on the mobility of two-dimensional electron gas in selectively doped GaAs/N-AlGaAs heterostructures grown by MBE Jpn. J. Appl. Phys. 20 L455–L458 (1981)ADSGoogle Scholar
  86. 593.
    Hiyamizu, S., Fujii, T., Nanbu, K., Hashimoto, H. Lateral uniformity in Sn- or Si-doped n-GaAs grown by molecular beam epitaxy J. Cryst. Growth 51 149–152 (1981)ADSGoogle Scholar
  87. 594.
    Hiyamizu, S., Mimura, T. R MBE-grown selectively doped GaAs/N-AlGaAs heterostructures and their application to high electron mobility transistors in “Semiconductor Technologies” Ed. J. Mishizawa (OHMSHA, Tokyo, 1981) 258–271 (1981)Google Scholar
  88. 595.
    Hiyamizu, S., Mimura, T., Fujii, T., Nanbu, K., Hashimoto, H. Extremely high mobility of two dimensional electron gas in selectively doped GaAs/N-AlGaAs heterojunction structures grown by MBE Jpn. J. Appl. Rhys. 20 L245–L248 (1981)ADSGoogle Scholar
  89. 596.
    Hiyamizu, S, Nanbu, K., Mimura, T., Fujii, T., Hashimoto, H. Room-temperature mobility of two-dimensional electron gas selectively doped GaAs/N-AlGaAs heterojunction structures Jpn. J. Appl. Phys. 20 L378–L380 (1981)ADSGoogle Scholar
  90. 597.
    Holonyak, N., Jr., Laidig, W.D., Camras, M.D., Morkoc, H., Drummond, T.J., Hess, K. Clustering and phorion effects in A1 xGal-xAs-GaAs quantum-well heterostructure lasers grown by molecular beam epitaxy Solid State Commun. 40 71–74 (1981)Google Scholar
  91. 598.
    Holonyak, N., Jr., Laidig, W.D., Camras, M.D., Morkoc, H., Drummond, T.J., Hess, K., Burroughs, M.S. Clustering in molecular beam epitaxial A1xGal-xAs-GaAs quantum-well heterostructure lasers J. Appl. Rhys. 52 7201–7207 (1981)ADSGoogle Scholar
  92. 599.
    Ihm, J., Joannopoulos, J.D. T Ground-state properties of GaAs and AlAs Phys. Rev. B 24 4191–4197 (1981)Google Scholar
  93. 600.
    Inoue, M., Hiyamizu, S., Hida, H., Hashimoto, H., Inuishi, Y. Hot electron effects in a 2D electron gas at the Ga As/Al Ga As interface J. Physique 42 Colloque C7 C7/19-C7/24 (1981)Google Scholar
  94. 601.
    Ishibashi, T., Suzuki, Y., Okamoto, H. Photoluminescence of an AlAs/GaAs superlattice grown by MBE in the 0.7-0.8 um wavelength region Jpn. J. Appl. Phys. 20 L623–L626 (1981)ADSGoogle Scholar
  95. 602.
    Ishikawa, H., Mimura, T, Hiyamizu, S. R Opening in molecular beam epitaxy devices in “Solid State Devices 1981;, Proc. ESSDERC-11 & SSSDT-6” (Les Ulis. Les Editions de Physique, Paris, 1981 ) 137–152 (1981)Google Scholar
  96. 603.
    Ishikawa, T. 9 Hiyamizu, S. 9 Mimura, T., Saito, J., Hashimoto, H. The effect of annealing on the electrical properties of selectivly doped GaAs/N-AlGaAs Heterojunction structures grown by MBE Jpn. J. Appl. Phys. 20 L814–L816 (1981)Google Scholar
  97. 604.
    Johannessen, J-S., 01egg9J.B, Foxon, C.T., Joyce, B.A. Interface composition profiles of MBE grown GaP films on GaAs substrates Phys. Scr. 24 440–443 (1981)Google Scholar
  98. 605.
    Joyce, B.A. R Molecular beam epitaxy Phys. Educ. 16 328–332 (1981)Google Scholar
  99. 606.
    Judaprawira, S., Wang, W.I., Chao, P.C., Wood, C.E.C., Woodard, D.W., Eastman, L.F. Modulation-doped MBE GaAs/n-AlxGal-xAs MESFETs IEEE Electron Device Lett. EDL-2 14–15 (1981)Google Scholar
  100. 607.
    Kawamura, Y., Asahi, H., Ikeda, M., Okamoto, H. Improved properties of In(x)Ga(1-x)As layers grown by molecular-beam epitaxy on InP substrates J. Appl. Phys. 52 3445–3452 (1981)ADSGoogle Scholar
  101. 608.
    Kawamura, Y., Asahi, H., Nagai, H. Molecular beam epitaxial growth of undoped low-resistivity In(x)Ga(1-x)P on GaAs at high substrate temperatures (500–580 C) Jpn. J. Appl. Phys. 20 L807–L810 (1981)ADSGoogle Scholar
  102. 609.
    Kazarinov, R.F, Luryi, S. T Charge injection over triangular barriers in unipolar semiconductor structures Appl. Phys. Lett. 38 810–812 (1981)Google Scholar
  103. 610.
    Keever, M., Drummond, T.J., Hess, K., Morkoc, H., Streetman, B.G. Time dependence of current at high electric fields in A1xGal-xAs-GaAs heterojunction layers Electron. Lett. 17 93–94 (1981)Google Scholar
  104. 611.
    Keever, M., Shichijo, H., Hess, K., Banerjee, S., Witkowski, L., Morkoc, H., Streetman, B.G. Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGal-xAs heterojunction layers Appl. Phys. Lett. 38 36–38 (1981)Google Scholar
  105. 612.
    Kirchner, P.D., Woodall, J.Ii., Freeouf, J.L., Pettit, G.D. Volatile metal-oxide incorporation in layers of GaAs, Ga ( 1-x) AI (x) As and related compounds grown by molecular beam epitaxy Appl- Phys. Lett. 38 427–429 (1981)Google Scholar
  106. 613.
    Kirchner, P.D., Woodall, J.M., Freeouf, J.L., Wolford, D.J., Pettit, G.D. Volatile metal oxide incorporation in layers of GaAs and Ga(1-x)Al(x)As grown by molecular beam epitaxy J. Vac. Sci. Technol. 19 604–606 (1981)Google Scholar
  107. 614.
    Kondoh, H., Berenz, J-, Hierl, T.L., Dalman, 6.C., Lee, C.A. High efficiency mode characterization in a 20 GHz MBE GaAs IMPATT diode amplifier IEEE MTT-S Int. Microwave Symposium Digest 238–240 (1981)Google Scholar
  108. 615.
    Koschel, W.H., Smith, R.S., Hiesinger, P. Optical and electrical characterization of chemical defects in GaAs layers grown by MBE J. Electrochem. Soc. 128 1336–1338 (1981)Google Scholar
  109. 616.
    Kowalczyk, S.P., Miller, D.L., Waldrop, J.R., Grant, R.W., Newman, P.G. Protection of molecular beam epitaxy grown AlxGal-xAs epilayers during ambient transfer J. Vac. Sci. Technol. 19 255–256 (1981)ADSGoogle Scholar
  110. 617.
    Kroemer, H. T Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions J. Appl. Phys. 52 873–878 (1981)ADSGoogle Scholar
  111. 618.
    Kuenzel, H., Doehler, G.H., Fischer, A., Ploog, K. Modulation of two-dimensional conductivity in a molecular beam epitaxi ally grown GaAs bulk space-charge system Appl. Phys. Lett. 38 171–174 (1981)Google Scholar
  112. 619.
    Kuenzel, H., Graf, K., Hafendoerfer, M., Fischer, A., Ploog, K. R IEC-Bus-Mess-System fuer die Halbleiterforschungs 1) Charakteristisehe Messgroessen an Schottky-Kontakten 2) Aufbau von Hard- und Software 3)Messergebnisse und Diskussion Techn. Messen 48 295–300, 397–401, 435–440 (1981)Google Scholar
  113. 620.
    Kuenzel, H., Ploog, K. Sharp-line luminescence transitions due to growth induced point defects in MBE GaAs Inst. Phys. Conf. Ser. 56 519–528 (1981)Google Scholar
  114. 621.
    Kline, K., Martin, R.M. T Atomic structure and properties of polar Ge-GaAs(100) interfaces Rhys. Rev. B 24 3445–3455 (1981)Google Scholar
  115. 622.
    Landgren, B., Ludeke, R. A1-reactions with GaAs (100) surfaces Solid State Commun. 37 127–131 (1981)Google Scholar
  116. 623.
    Landwehr, G. Praezisionsbestimmung der Fei nstrukturkonstanten aus Magnetotransportmessungen an Halblei ter-Randschichten Rhys. Bl. 37 59–65 (1981)Google Scholar
  117. 624.
    Larsen, P.K., Neave, J.H., Joyce, B.A. Angle-resolved photoemission from As-stable GaAs(001)surfaces prepared by MBE J. Rhys. C 14 167–192 (1981)ADSGoogle Scholar
  118. 625.
    Larsen, P.K., Veen, J.F. van der, Mazur, A., Pol1mann, J-, Verbeek, B.H. Photoemission from vallence bands of GaAs(001) grown by molecular beam epitaxy Solid State Commun. 40 459–462 (1981)Google Scholar
  119. 626.
    Laugh1in, R.B. Quantized Hall conductivity in two dimensions Phys. Rev. B 23 5632–5633 (1981)Google Scholar
  120. 627.
    Laviron, M., Delagebeaudeuf, D., Delescluse, P., Chaplart, J., Linh, N.T. Low-noise two-dimensional electron gas FET Electron. Lett. 17 536–537 (1981)Google Scholar
  121. 628.
    Lee, T.P., Holden, W.S., Cho, A.Y. Improved molecular beam epitaxial growth of AlxGal-xAs/GaAs high-radiance LED’s for optical communications IEEE J. Quantum Electron. QE-17 387–391 (1981)Google Scholar
  122. 629.
    Levy, H.M., Metze, G.M., Woodard, D.W., Camp, W.O., Tiberio, R.C., Mood, C.E.C., Eastman, L.F. GaAs integrated circuits by selective epitaxy and electron beam lithography Solid State Technol. August 127–130 (1981)Google Scholar
  123. 630.
    Luscher, P.E. R Molecular beam epitaxy: An emerging epitaxy technology Thin Solid Films 83 125–141 (1981)ADSGoogle Scholar
  124. 631.
    Maan, J.C., Buldner, Y., Vieren, J.P., Voisin, P., Voos, M., Chang, L.L., Esaki, L. Three-dimensional character of semimetallie InAs-GaSb super1attices Solid State Commun. 39 683–686 (1981)Google Scholar
  125. 632.
    Madhukar, A, Delgada, J. T The electronic structure of Si/GaP (110) interface and superlattice Solid State Commun. 37 199–203 (1981)Google Scholar
  126. 633.
    Malik, R.J., Board, K., Eastman, L.F., Wood, C.E.C., AuCoin, T.R., R. ss, R.L. Rectifying, variable pianar-doped-barrier structures in GaAs Inst. Phys. Conf. Ser. 56 697–710 (1981)Google Scholar
  127. 634.
    Massies, J., Chaplart, J., Laviron, M., Linh, N.T. Monocrystal1ine aluminium ohmic contact to n-GaAs by H2S adsorption Appl. Phys. Lett. 38 693–695 (1981)Google Scholar
  128. 635.
    McAfee, S.R., Tsang, N.T., Lang, D.M. The effect of substrate growth temperature on deep levels in n-AlxGal-xAs grown by molecular beam epitaxy J. Appl. Phys. 52 6165–6167 (1981)ADSGoogle Scholar
  129. 636.
    Mendez, E.E., Chang, L.L., Landgren, G., Ludeke, R., Esaki, L., Pollak, F.H. Observation of superlattice effects on the electronic bands of multilayer heterostructures Phys. Rev. Lett. 46 1230–1234 (1981)ADSGoogle Scholar
  130. 637.
    Metze, G.M., Levy, H.M., Woodard, D.W., Wood, C.E.C., Eastman, L.F. GaAs integrated circuits by selective molecular beam epitaxy Inst. Phys. Conf. Ser. 56 161–170 (1981)Google Scholar
  131. 638.
    Miller, D.L., Newman, P.G. Low cost spinner for semi conductor surface preparation prior to MBE growth J. Vac. Sei. Technol. 19 124 (1981)ADSGoogle Scholar
  132. 639.
    Miller, R.C., Kleinman, D.A., Munteanu, O., Tsang, W.T. New transitions in the photoluminescence of GaAs quantum wells Appl. Phys. Lett. 39 1–3 (1981)Google Scholar
  133. 640.
    Miller, R.C., Kleinman, D.A., Tsang, W.T., Gossard, A.C. Observation of the excited level of excitons in GaAs quantum wells Phys. Rev. B24 1134–1136 (1981)Google Scholar
  134. 641.
    Miller, R.C., Tsang, W.T. Al-Ga disorder in AlxGal-xAs alloys grown by molecular beam epitaxy Appl. Phys. Lett. 39 334–335 (1981)Google Scholar
  135. 642.
    Miller, R.C., Weisbuch, C., Gossard, A.C. Alloy clustering in AlxGal-xAs Phys- Rev. Lett. 46 1042 (1981)ADSGoogle Scholar
  136. 643.
    Mimura, T., Hiyamizu, S., Joshin, K., Hikosaka, K. Enhancement-mode high electron mobility transistors for logic applications Jpn. J. Appi. Rhys. 20 L317–L319 (1981)ADSGoogle Scholar
  137. 644.
    Mimura, T., Joshin, K., Hiyamizu, S., Hikosaka, K., Abe, M. High electron mobility transistor logic Jpn. J. Appi. Rhys. 20 L598–L600 (1981)ADSGoogle Scholar
  138. 645.
    Minchev, G.M., Ber, B.Y., Kop’ev, P.S., Mel’tser, B.Y. Effective substrate preparation method for molecular-ion epitaxy Sov. Tech. Rhys. Lett. 7 518–519 (1981)Google Scholar
  139. Minchev, G.M., Ber, B.Y., Kop’ev, P.S., Mel’tser, B.Y. Effective substrate preparation method for molecular-ion epitaxy Pis’ma Zh. Tekh. Fiz. 7 1209–1213 (1981)Google Scholar
  140. Minchev, G.M., Ber, B.Y., Kop’ev, P.S., Mel’tser, B.Y. Effective substrate preparation method for molecular-ion epitaxy Pis’ma Zh. Tekh. Fiz. 7 1209–1213 (1981)Google Scholar
  141. 646.
    Mon, K.K., Hess, K., Dow, J.D. T Deformation potentials of super1 attices and interfaces J. Mac. Sci. Technol. 19 564–566 (1981)Google Scholar
  142. 647.
    Morgan, D.V., Ohno, H., Wood, C.E.C., Eastman, L.F., Berry, J.D. Ion beam analysis of molecular beam epitaxy InAlAs/InGaAs layer structures J. Electrochem. Soc. 128 2419–2424 (1981)Google Scholar
  143. 648.
    Morgan, D.V., Ohno, H., Wood, C.E.C., Schaff, W.J., Board, K., Eastman, L.F. Characterisation of Al/AlInAs/GalnAs heterostructures IEE Proc. 128, Pt. I 141–143 (1981)Google Scholar
  144. 649.
    Morgan, D.V., Wood, C.E.C., Ohno, H., Eastman, L.F. Channeling analysis of MBE InAlAs/InGaAs interfaces J. Vac. Sci. Technol. 19 596–598 (1981)ADSGoogle Scholar
  145. 650.
    Morkoc, H. Current transport i n modulation doped (Al9Ga)As/GaAs heterostructures: Applications to high speed FET’s IEEE Electron Device Lett. EDL-2 260–262 (1981)Google Scholar
  146. 651.
    Munoz-Yague, A., Piqueras, J., Fabre, N. Preparation of carbon-free GaAs surfaces: AES and RHEED analysis J. Electrochem. Soc. 128 149–153 (1981)Google Scholar
  147. 652.
    Narita, S., Takeyama, S., Luo, W., Hiyamizu, S., Nanbu, K., Hashimoto, H. Galvanomagnetic study of 2-dimensional electron gas in AlxGal-xAs/GaAs heterojunction FET Jpn. J. Appl. Phys. 20 L443–L446 (1981)ADSGoogle Scholar
  148. 653.
    Narita, B., Takeyama, S., Luo, W., Hiyamizu, S., Nanbu, K., Hashimoto, H. Magnetoconductance investigations o-f A1 xGa 1 -xAs/GaAs heterojunction FET in strong magnetic fields Jpn- J- Appl- Rhys- 20 L447–L450 (1981)Google Scholar
  149. 654.
    Noreika, A.J., Francombe, M.H., Wood, C.E.C. Growth of Sb and InSb by molecular-beam epitaxy J. Appl. Phys. 52 7416–7420 (1981)Google Scholar
  150. 655.
    O’Clock96.D., Jr., Erickson, L.P, Mattord, T.J. R MBE: Precise processing for better EHF devices Microwaves, August 101–105 (1981)Google Scholar
  151. 656.
    Oe, K, Ando9S, Sugiyama, K. InSb(1-x)Bi(x) films grown by molecular beam epitaxy Jpn. J. Appl. Phys. 20 L303–L306 (1981)Google Scholar
  152. 657.
    0hnofH, Barnard, J.A., Rathbun, L., Wood, C.E.C., Eastman, L.F. Double heterostructure Ga(0.47)In(0.53)As MESFETs by molecular beam epitaxy Inst. Phys. Conf. Ser. 56 465–473 (1981)Google Scholar
  153. 658.
    Ohno, H., Wood, C.E.G., Rathbun, L., Morgan, D.V., Wicks, G.W., Eastman, L.F. GalnAs-AlInAs structures grown by molecular beam epitaxy J. Appl. Phys. 52 4033–4037 (1981)ADSGoogle Scholar
  154. 659.
    Okamoto, K., Wood, C.E.C., Eastman, L.F. Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structures Appl. Phys. Lett. 38 636–638 (1981)Google Scholar
  155. 660.
    Omori, M., Drummond, T.J., Morkoc, H. Low-noice GaAs field-effect transistors prepared by molecular beam epitaxy Appl. Phys. Lett. 39 566–569 (1981)Google Scholar
  156. 661.
    Palmier, J.F. R Les super-reseaux artificiels Echo Rech. 105 41–48 (1981)Google Scholar
  157. 662.
    Park, R.M., Stanley, C.R. Characterisation of a deep electron trap in molecular-beam epitaxial InP Electron. Lett. 17 669–670 (1981)Google Scholar
  158. 663.
    Park, R.M., Stanley, C.R., Clampitt, R. A low-energy ion source for p-type doping in MBE Inst. Phys. Conf. Ser. 54 235–240 (1981)Google Scholar
  159. 664.
    Parker, E.H.C., Kubiak, R.A., King, R.M., Brange, J.D. An investigation into silicon doping of MBE(100) GaAs J. Phys. D 14 1853–1865 (1981)ADSGoogle Scholar
  160. 665.
    Pawlik, J.R., Tsang, W.T., Nash, F.R., Hartman, R.L., Swaminathan, V. Reduced temperature dependence of threshold of (A1, Ga) As lasers grown by molecular beam epitaxy Appl. Phys. Lett. 38 974–976 (1981)Google Scholar
  161. 666.
    Petroff, P.M., Feldman, L.C, Cho, A. Y., Williams, R.S. Properties of aluminium epitaxial growth on GaAs J. Appl. Phys. 52 7317–7320 (1981)ADSGoogle Scholar
  162. 667.
    Petroff, P.M., Weisbuch, C., Dingle, R., Gossard, A.C., Wiegmann, W. Luminescence properties of GaAs-Gal-xA1xAs double heterostructures and multiquantum-wel1 superlattices grown by molecular beam epitaxy Appl. Phys. Lett. 38 965–967 (1981)Google Scholar
  163. 668.
    Phillips, J.C, T Electronic and atomic structure of type-II semi conductor super1attices Phys. Rev. B 24 3620–3622 (1981)Google Scholar
  164. 669.
    Pinczuk, A., Norlock, J.M., Stoermer, H.L., Gossard, A.C., Wiegmann, W. Light scattering spectroscopy of electrons in GaAs-(A1Ga)As heterostructures:Correlation with transport properties J. Vac. Sci. Technol. 19 561–563 (1981)ADSGoogle Scholar
  165. 670.
    Piqueras, J. R Crecimiento epitaxial por haces moleculares Hundo Electronico 107 45–50 (1981)Google Scholar
  166. 671.
    Ploog, K. R Molecular beam epitaxy of III-V compounds: technology and growth process Ann. Rev. Mater. Sci. 11 171–210 (1981)ADSGoogle Scholar
  167. 672.
    Ploog, K. R Halbleiterschichtstrukturen aus dem System GaAs-AlAs mit neuartigen Eigenschaften: 1) Epitaxie durch Molekularstrahlung 2) Schichtdicken von 10 Atomabstaenden 3) FETs mit extrem kurzen Schaltzeiten Markt + Technik Nr.27 77–79, Nr. 29 74–77, Nr. 31 70–71 (1981)Google Scholar
  168. 674.
    Ploog,K., Fischer,A., Doehler,G.H., Kuenzel,H. Novel periodic doping structures in GaAs grown by molecular beam epitaxy Inst. Phys. Conf. Ser. 56 721–730 (1981)Google Scholar
  169. 675.
    Ploog, K., Fischer, A., Kuenzel, H. The use of Si and Be impurities for novel periodic doping structures in GaAs grown by molecular beam epitaxy J. Electrochem. Soc. 128 400–410 (1981)Google Scholar
  170. 676.
    Ploog, K., Kuenzel, H., Knecht, J., Fischer, A., Doehler, G.H. Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure Appl. Phys. Lett. 38 870–873 (1981)Google Scholar
  171. 677.
    Prange, R.E. T Quantized Hall resistance and the measurement of the fine-structure constant Phys. Rev. B 23 4802–4805 (1981)Google Scholar
  172. 678.
    Price, P.J. T Mesostructure electronics IEEE Trans. Electron Devices ED-28 911–914 (1981)Google Scholar
  173. 679.
    Price, P.J. T Two-dimensional electron layers II: screening J. Vac. Sci. Technol. 19 transport in semiconductor 599–603 (1981)Google Scholar
  174. 680.
    Price, P.J. T Two-dimensional electron transport in semi conductor layers. 1) Phonon Scattering Ann. Phys. 133 217–239 (1981)ADSGoogle Scholar
  175. 681.
    Ranke, W., Jacobi, K. R Structure and reactivity of Ga As surfaces Prog. Surf. Sci. 10 1–52 (1981)Google Scholar
  176. 682.
    Rendeil, R.N., Girvin, S.M. T Hall voltage dependence on inversion-layer geometry in the quantum Hall-effect regime Phys. Rev. B 23 6610–6614 (1981)Google Scholar
  177. 683.
    Roberts, J.S., Dawson, P., Scott, G.B. Homoepitaxial molecular beam growth of InP on thermally cleaned (100) oriented substrates Appl. Phys. Lett. 38 905–907 (1981)Google Scholar
  178. 684.
    Roberts, J.S., Scott, G.B., Sowers, J.P. Structural and photoluminescent properties of GaxIn1-xP(x=0.5) grown on GaAs by molecular beam epitaxy J. Appl. Phys. 52 4018–4026 (1981)Google Scholar
  179. 685.
    Sakaki, H., Sekiguchi, Y., Sun, D. C., Taniguchi, M., Ohno, H., Tanakay A. Schottky-barrier properties of nearly-ideal (n=1) Al contacts on MBE- and heat cleaned-GaAs surfaces Jpn. J. A. pl. Phys. 20 L107–L110 (1981)ADSGoogle Scholar
  180. 686.
    Satpathy, S., Altarelli, M. T Model calculation of the optical properties of semi conductor quantum wells Phys. Rev. B 23 2977–2982 (1981)Google Scholar
  181. 687.
    Schulman, J.N, Chang, Y.C. T New method for calculating electronic properties of superlattices using complex band structures Phys. Rev. B 24 4445–4448 (1981)Google Scholar
  182. 688.
    Schulman, J.N., McBill, T.C. T Complex band structure and superlattice electronic states Phys. Rev. B 23 4149–4155 (1981)Google Scholar
  183. 689.
    Schwartz, G.P., Cho, A.Y. Chemical reaction at the Al-GaAs interface J. Vac. Sci. Technol. 19 607–610 (1981)ADSGoogle Scholar
  184. 690.
    Scott, G.B., Duggan, G., Dawson, P. A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 52 6888–6894 (1981)ADSGoogle Scholar
  185. 691.
    Interface recombination velocity and misfit strain in molecular-beam epitaxy double heterostructures of GaAs/GasxIn1-xP (0.47>x>0.51) J.Appl. Phys. 52 6312–6315 (1981)Google Scholar
  186. 692.
    Serrano, C.M., Chang, C.A. Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy Appl. Phys. Lett. 39 808–809 (1981)Google Scholar
  187. 693.
    Skeath, P., Lindau, I., Su, C.Y., Spicer, W.E. Models of column III and V elements on GaAs(110): application to MBE J. Vac. Sci. Technol. 19 556–560 (1981)ADSGoogle Scholar
  188. 694.
    Skeath, P., Su, C.Y., Lindau, I., Spicer, W.E. Bonding of column 3 and 5 atoms on GaAs(110) Solid State Commun. 40 873–876 (1981)Google Scholar
  189. 695.
    Srobar, F. T Configuration entropy of ternary alloy superlattice Cryst. Res. Technol. 16 1173–1180 (1981)Google Scholar
  190. 696.
    Stall, R. A., Wood, C.E.C., Board, K., Dandekar, N., Eastman, L.F., Devlin, W. J. A study of Ge/GaAs interfaces grown by molecular beam epitaxy J. Appl. Phys. 52 4062–4069 (1981)Google Scholar
  191. 697.
    Stanchak, C.M., Morkoc, H., Witkowski9L.C., Drummond, T. J. Automatic shutter controller for molecular beam epitaxy Rev. Sci. Instrum. 52 438–442 (1981)Google Scholar
  192. 698.
    Stoermer, H.L., Gossard, A.C., Wiegmann, W. Backside-gated modulation-doped GaAs-(AlGa) As heterojunction interface Appl. Phys. Lett. 39 493–495 (1981)Google Scholar
  193. 699.
    Stoermer, H.L., Gossard, A.C., Wiegmann, W., Baldwin, K. Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration Appl. Phys. Lett. 39 912–914 (1981)Google Scholar
  194. 700.
    Stoermer, H.L, Pinczuk, A., Gossard, A.C, Wiegmann, W. Influence of an undoped (Al Ga)As spacer on mobility enhancement in GaAs-(A1Ga)As superlattices Appl. Phys. Lett. 38 691–693 (1981)Google Scholar
  195. 701.
    Stringfellow, 6.B., Stall, R.A., Koschel, W.H. Carbon in molecular beam epitaxial GaAs Appl. Phys. Lett. 38 156–157 (1981)Google Scholar
  196. 702.
    Sullivan, P.W, Farrow, R.F.C., Jones, G.R., Stanley, C.R. MBE growth of InP and epitaxial aluminium contacts Inst. Phys. Conf. Ser. 56 45–54 (1981)Google Scholar
  197. 703.
    Swaminathan, V., Tsang, W.T. Effect of growth temperature on the photoluminescent spectra from Sn-doped Gal-xAs grown by molecular beam epitaxy Appl. Phys. Lett. 38 347–349 (1981)Google Scholar
  198. 704.
    Taylor, J.A. An XPS study of the oxidation of AlAs thin films grown by MBE J. Vac. Sci. Technol. 20 751–755 (1981)Google Scholar
  199. 705.
    Thouless, D.J. T Localisation and the two-dimensional Hall effect J. Phys. C 14 3475–3480 (1981)Google Scholar
  200. 706.
    Tsang, W.T. R Reliable (A1Ga) As DH lasers grown by molecular beam epitaxy for optical communication systems Proc. SPIE - Int. Soc. Opt. Eng. 269 17–24 (1981)Google Scholar
  201. 707.
    Tsang, W.T. A10.48InO.52As/GaO.47InO.53As/Al0.48InO.52 As double-heterostructure lasers grown by molecular beam epitaxy with lasing wavelength at 1.65mum J. Appl. Phys. 52 3861–3864 (1981)ADSGoogle Scholar
  202. 708.
    Tsang, W.T. A new current-i njecti on heterostructure lasers the double-barrier double-heterostructure laser Appl. Phys. Lett. 38 835–837 (1981)Google Scholar
  203. 709.
    Tsang, W.T. Extension of lasing wavelenghts beyond 0.87mum in GaAs/AlxGal-xAs double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy Appl. Phys. Lett. 38 661–663 (1981)Google Scholar
  204. 710.
    Tsang, W.T. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 39 786–788 (1981)Google Scholar
  205. 711.
    Tsang, W.T. High-through-put, high-yield, and highly-reproducible (AlGa)As double-heterostructure laser wafers grown by molecular beam epitaxy Appl. Phys. Lett. 38 587–589 (1981)Google Scholar
  206. 712.
    Tsang, W.T. A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam Appl. Phys. Lett. 39 134–137 (1981)Google Scholar
  207. 713.
    Tsang, W.T. R Novel optoelectronic devices prepared by molecular beam epitaxyGoogle Scholar
  208. Proc. SPIE - Int. Soc. Opt. Eng. 317 66–73 (1981)Google Scholar
  209. 714.
    Tsang, W.T. Device characteristics of:alGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 58 204–207 (1981)Google Scholar
  210. 715.
    Tsang, W.T., Ditzenberger, J.A. A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy Appl. Phys. Lett. 39 193–194 (1981)Google Scholar
  211. 716.
    Tsang, W.T., Hartman, R.L. cw narrow beam (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 38 502–504 (1981)Google Scholar
  212. 717.
    Tsang, W.T., Hartman,R.TL., Schwartz,B., Fraley,P.E., Holbrook,W.R. The reliability of (A1Ga\As double-hetrostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 39 683–685 (1981)Google Scholar
  213. 718.
    Tsang, W.T., Hoibrook, W.R., Fraley, P.E. The high-temperature (55-70C) device characteristics of cw (AlGa)As double-heterostructure proton-bombarded stripe lasers grown by molecular beam epitaxy Appl. Phys. Lett. 38 6–9 (1981)Google Scholar
  214. 719.
    Tsang, W.T., Hoibrook, W.R., Fraley, P.E. Optical self-pulsation behavior of cw (A18a) As shallow proton-bombarded and narrow-striped (5mum) double-heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 39 34–37 (1981)Google Scholar
  215. 720.
    Tsang, W.T., Swaminathan, V. The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially-grown Sn-doped A1xGal-xAs Appl. Phys. Lett. 39 486–487 (1981)Google Scholar
  216. 721.
    Tsui, D.C., Gossard, A.C. Resistance standard using quantization of the Hall resistance of GaAs-AlxGal-xAs heterostructures Appl. Phys. Lett. 38 550–552 (1981)Google Scholar
  217. 722.
    Tsui, D.C., Gossard, A.C., Kaminsky, G., Wegmann, W. Transport properties of GaAs-AlxGal-xAs heterojunction field-effect transistors Appl. Phys. Lett. 39 712–714 (1981)Google Scholar
  218. 723.
    R Veuhoff, E., Pletschen, W., Balk, P., Lueth, H. Metal organic CVD of GaAs in a molecular beam system J. Cryst. Growth 55 30–34 (1981)ADSGoogle Scholar
  219. 724.
    Voisin, P., Bastard, G., Goncalves da Silva, C.E.T., Voos, M., Chang, L.L., Esaki, L. Luminescence from InAs-GaSb super1attices Solid State Commun. 39 79–82 (1981)Google Scholar
  220. 725.
    Voos, M., Esaki, L. InAs-GaSb Super1attices in high magnetic fields in “Physics in High Magnetic Fields”, Eds. S.Chikazumi and N.Miura, Springer Ser. Solid State Sci. Vol. 24 292–300 (1981)Google Scholar
  221. 726.
    Waldrop, J.R., Kowalczyk, S.P., Brant, R.W., Kraut, E.A-, Miller, D-LXPS measurement of GaAs-A1As heterojunction band discontinuities: Growth sequence dependence J. Vac. Sci. Technol. 19 573–575 (1981)ADSGoogle Scholar
  222. 727.
    Wang, W.I., Judaprawira, S-, Wood, C.E.C., Eastman, L.F. Molecular beam epitaxial GaAs-AlxGa1-xAs heterostructures for metal semiconductor field effect transistor applications Appl. Phys. Lett. 38 708–710 (1981)Google Scholar
  223. 728.
    Wang, W.I., Wood, C.E.C., Eastman, L.F. Extremely high electron mobilities in modulation-doped GaAs-AlxGal-xAs heterojunction superlattices Electron. Lett. 17 36–37 (1981)Google Scholar
  224. 729.
    Weimann, G., Schlapp, W., Burkhard, H. MBE growth of GaAs an GaAlAs for the fabrication of DH lasers Phys. Status Solidi A 64 K99–K103 (1981)ADSGoogle Scholar
  225. 730.
    Weisbuch, C. R Les superreseaux des cristaux contre nature Recherche 12 No. 118 100–102 (1981)MathSciNetGoogle Scholar
  226. 731.
    Weisbuch, C., Dingle, R., Gossard, A.C., Wiegmann, W. Optical properties and interface disorder of GaAs-A1(x)Ga(1-x)As multi-quantum wel1 structures Inst. Phys. Conf. Ser. 56 711–720 (1981)Google Scholar
  227. 732.
    Weisbuch, C., Dingle, R., Gossard, A.C., Wiegmann, W. Optical characerization of interface disorder in GaAs-Gal-xA1xAs multi-quantum well structures Solid State Commun. 38 709–712 (1981)Google Scholar
  228. 733.
    Weisbuch, C., Dingle, R., Petroff, P.M., Gossard, A.C., Wiegmann, W. Dependance of the structural and optical properties of GaAs-Ga1-xA1xAs multi quantum-well structures on growth temperature Appl. Phys. Lett. 38 840–842 (1981)Google Scholar
  229. 734.
    Weisbuch, C., Miller, R.C., Dingle, R., Gossard, A.C., Wiegmann, W. Intrinsic radiative recombination from quantum states in GaAs-AlxGa1-x As multi-quantum well structures Solid State Commun. 37 219–222 (1981)Google Scholar
  230. 735.
    White, S.R., Sham, L.J. T Electronic properties of flat-band semiconductor heterostructures Phys. Rev. Lett. 47 879 - 882 (1981)ADSGoogle Scholar
  231. 736.
    Whitehouse, S.B., Faxon, C.T., Joyce, B.A. Thermal desorpti on spectroscopy of condensed lead films on (100) GaAs surfaces Appl. Rhys, A 26 27–33 (1981)Google Scholar
  232. 737.
    Wicks, G.W., Wang, W.I., Wood, C.E.G., Eastman, L.F., Rathbun, L. Photoluminescence of AlxGal-xAs grown by molecular beam epitaxy J. Appl. Rhys. 52 5792–5796 (1981)ADSGoogle Scholar
  233. 738.
    Williams, R.S., Feldman, L.C., Cho, A.Y. Channeling at the crystal-crystal interfaces A1 on GaAs(001) Radiat. Effects 54 217–220 (1981)Google Scholar
  234. 739.
    Witkowski, L.C., Drummond, T.J., Barnett, S.A., Morkoc, H., Cho, A. Y., Greene, J.E. High mobility GaAs-A1xGa1-xAs single period modulation-doped heterojunctions Electron. Lett. 17 126–128 (1981)Google Scholar
  235. 740.
    Wood, C.E.C. RED intensity oscillations during MBE of GaAs Surf. Sci. 108 L441–L443 (1981)Google Scholar
  236. 741.
    Wood, C.E.G. R Novel device structures by molecular beam epitaxy J. Vac. Sci. Technol. 18 772–777 (1981)ADSGoogle Scholar
  237. 742.
    Wood, C.E.C., Rathbun, L., Ohno, H., DeSimone, D. On the origin and elimination of macroscopic defects in MBE films J. Cryst. Growth 51 299–303 (1981)ADSGoogle Scholar
  238. 743.
    Woodall, J.M., Freeouf, J.L., Pettit, G.D., Jackson, T.N., Kirchner, P.D. Ohmic contacts to n-GaAs using graded band gap layers of Ga(l-x)In(x) As grown by molecular beam epitaxy J. Vac. Sci. Technol. 19 626–627 (1981)ADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Klaus Ploog
    • 1
  • Klaus Graf
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany

Personalised recommendations