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Abstreiter, S., Ploog, K. Inelastic light scattering from a quasi-two-dimensional electron system in Ga As-Al(x)Ga(1-x)As heterojunctions Phys. Rev. Lett. 42 1308–1311 (1979)
Ando, T., Mori, S. T Electronic properties of a semiconductor superlattice. I. Self-consistent calculation of subband structure and optical spectra J. Phys. Soc. Jpn. 47 1518–1528 (1979)
Andreoni, W., Car, R., Baldereschi, A. T Effects of cation order on the energy bands of Ga As-AlAs heterostructures Inst. Phys. Conf. Ser. 43 733–736 (1979)
Arthur, J.R., Jr., Johnson, W.C. R Superlattices Ind. Res. Dev. 21 No. 1 109–116 (1979)
Asahi, H., Okamoto, H., Ikeda, M., Kawamura, Y. Properties of molecular beam epitaxial In(x)Ga(1-x)As (x=0.53) layers grown on InP substrates Jpn. J. Appl. Phys. 18 565–573 (1979)
Bachrach, R.Z. R Semiconductor surface and crystal physics studied by MBE Prog. Crystal Growth Charact. 2 115–144 (1979)
Bachrach, R.Z., Bauer, R.S., McMenamin, J.C., Bianconi, A. Microscopic aspects of metal-Ga As interface formation Inst. Phys. Conf. Ser. 43 1073–1076 (1979)
Bandy, S.G., Collins, D.M., Mishimoto, C.K. Low-noise microwave F.E.T.S. fabricated by molecular-beam epitaxy Electron. Lett. 15 218–219 (1979)
Bean, J.C., Dingle, R. Luminescent p-Ga As grown by zinc ion doped MBE Appl. Phys. Lett. 35 925–927 (1979)
Berson, B. R Making 1980’s semiconductors: molecules, electrons, and ions MSN Microwave Syst. News 9 No. 9 45–56 (1979)
Blanchet, R.C., Delhomme, B.J., Urgell, J.J. Analyse structurale du procede depitaxie par jets moleculairess Application a l’arseniure de gallium L’onde electrique 59 83–92 (1979)
Bluyssen, H.J.A., Maan, J.C., Wyder, P., Chang, L.L., Esaki, L. Cyclotron resonance in an InAs-GaSb superlattice Solid State Commun. 31 35–38 (1979)
Burnhaoi, R.D., Scifres, D.R. Integrated optical devices fabricated by MBE Prog. Crystal Growth Charact. 2 95–113 (1979)
Carenco, A., Menigaux, L., Alexandre, F., Abdalla, M.I., Brenac, A. Directional coupler switch in molecular-beam epitaxy Ga As Appl. Phys. Lett. 34 755–757 (1979)
Casey, H.C., Jr., Cho, A.Y., Foy, P.W. Reduction of surface recombination current with oxygen-doped A10.5Ga0.5As surface layer on n-type Ga As J. Vac. Sci. Technol. 16 1398–1401 (1979)
Casey, H.C., Jr., Cho, A.Y., Foy, P.W. Reduction of surface recombination current in Ga As p-n junctions Appl. Phys. Lett. 34 594–596 (1979)
Casey, H.C., Jr., Cho, A.Y., Lang, D.V., Nicollian, E.H., Foy, P.W. Investigation of heterojunctions for MIS devices with oxygen-doped Alx Gal-x As on n-type Ga As J. Appl. Phys. 50 3484–3491 (1979)
Chang, C.A., Segmueller, A. Substrate effect on the lattice constants of the MBE-grown In(1-x)Ga(x)As and GaSb(1-y)As(y) J. Vac. Sci. Technol. 16 285–286 (1979)
Chang, L.L., Esaki, L. R Semiconductor superlattices by MBE and their characterization Prog. Crystal Growth Charact. 2 3–14 (1979)
Chang, L.L., Kawai, N.J., Sai-Halasz, G.A., Ludeke, R., Esaki, L. Observation of semiconductor-semimetal transition in InAs-GaSb superlattices Appl. Phys. Lett. 35 939–942 (1979)
Cho, A.Y. R Recent developments in molecular beam epitaxy (MBE) J. Vac. Sci. Technol. 16 275–284 (1979)
Collins, D.M. The use of SnTe as the source of donor impurities in Ga As grown by molecular beam epitaxy Appl. Phys. Lett. 35 67–70 (1979)
Covington, D.W., Litton, C.W., Reynolds, D.C., Almassy, R.J., McCoy, G.L. R Photoluminescence and electrical characterization of MBE Ga As epilayers: a recent survey Inst. Phys. Conf. Ser. 45 171–180 (1979)
Covington, D.W., Meeks, E.L. R Unintentional dopants incorporated in Ga As layers grown by molecular beam epitaxy J. Vac. Sci. Technol. 16 847–850 (1979)
Cullis, A.G., Farrow, R.F.C. A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InP Thin Solid Films 58 197–202 (1979)
DiLorenzo, J.V., Niehaus, W.C., Cho, A.Y. Nonalloyed and in situ Ohmic contacts to highly doped n-type Ga As layers grown by molecular beam epitaxy (MBE) for field-effect transistors J. Appl. Phys. 50 951–954 (1979)
Dingle, R., Stoermer, H.L., Gossard, A.C., Wiegmann, W. R Electronic properties of modulation-doped Ga As-AlGa As heterojunction superlattices Inst. Phys. Conf. Ser. 45 248–255 (1979)
Doehler, G.H. T Doping superlattices J. Vac. Sci. Technol. 16 851–856 (1979)
Doehler, G.H., Ploog, K. R Periodic doping structure in Ga As Progr. Crystal Growth Charact. 2 145–168 (1979)
Esaki, L., Chang, L.L. R Semiconductor superlattices in high magnetic fields J. Magn. Magnetic Mater. 11 208–215 (1979)
Esaki, L., Sai-Halasz, G.A. T Novel microwave/infrared detectors with semiconductor superlattices IBM Tech. Disclosure Bull. 22 1262–1264 (1979)
Fan, J.C.C., Calawa, A.R., Chapman, R.L., Turner, G.W. Efficient shallow-homojunction Ga As solar cells by molecular beam epitaxy Appl. Phys. Lett. 35 804–806 (1979)
Farrow, R.F.C., Cullis, A.G., Grant, A.J., Jones, G.R. Molecular beam epitaxy and field emission deposition for metal film growth on III-V compound semiconductors - a comparative study Thin Solid Films 58 189–196 (1979)
Fujii, T., Suzuki, H., Hiyamizu, S. Sn-doped Ga As films grown by molecular beam epitaxy Fujitsu Sci. Tech. J. 121–130 (1979)
Barrier, C.M., Su, C. Y., Shen, Y.D., Lee, C.S., Pearson, G.L., Spicer, W.E. Interface studies of Al(x)Ga(1-x)As-Ga As heterojunctions J. Appl. Phys. 50 3383–3389 (1979)
Gibbs, H.M., Bossard, A.C., McCall, S.L., Passner, A., Wiegmann, W., Venkatesan, T.N.C. Saturation of the free exciton resonance in Ga As Solid State Commun. 30 271–275 (1979)
Bibbs, H.H., McCall, S.L., Bossard, A.C., Passner, A., Wiegmann, W., Venkatesan, T.N.C. Controlling light with lights optical bistability and optical modulation in “Laser Spectroscopy IV”, Eds. H. Walther and K.W. Rothe (Springer Verlag, Berlin, Heidelberg, New York, 1979) 441–450 (1979)
Bibbs, H.M., McCall, S.L., Venkatesan, T.N.C., Gossard, A.C., Passner, A., Wiegmann, W. Optical bistability in semiconductors Appl. Phys. Lett. 35 451–453 (1979)
Bibbs, H.M., Venkatesan, T.N.C., McCall, S.L., Passner, A., Bossard, A.C., Wiegmann, W. Optical modulation by optical tuning of a cavity Appl. Phys. Lett. 34 511–514 (1979)
Bossard, A.C. R Ga As/AlAs layered films Thin Solid Films 57 3–13 (1979)
Brange, J.D., Parker, E.H.C. R Device fabrication for the future? Phys. Bull. 30 20–22 (1979)
Brange, J.D., Parker, E.H.C., King, R.M. Relationship of MBE growth parameters with the
electrical properties of thin (100) InAs epilayers J. Phys. D 12 1601–1612 (1979)
Gulyaev, Y.V., Dvoryankina, G.G., Dvoryankin, V.F., Cherevatski i, N.Y. R Molecular beam epitaxy - a promising method for fabrication of integrated-optics devices. I. Injection lasers
Gulyaev, Y.V., Dvoryankina, G.G., Dvoryankin, V.F., Cherevatski i, N.Y. R Molecular beam epitaxy - a promising method for fabrication of integrated-optics devices. I. Injection lasers
Kvantovaya Electron. (Moskow) 6 5–24 (1979)
Hess, K. T Impurity and phonon scattering in layered structures Appl. Phys. Lett. 35 484–486 (1979)
Hess, K., Morkoc, H., Shichijo, H., Streetman, B.G. Negative differential resistance through real-space electron transfer Appl. Phys. Lett. 35 469–471 (1979)
Hierl, T.L., Collins, D.M. Ga As Read IMPATT diodes by molecular beam epitaxy
Hiyamizu, S., Fujii, T., Nanbu, K., Maekawa, S., Hisatsugu, T. Laser operation of heteroepitaxial InxGal-xAs by molecular beam epitaxy Surf. Sci. 86 137 - 143 (1979)
Hiyamizu, S., Fujii, T., Nanbu, K., Maekawa, S., Hisatsugu, T. Laser operation of heteroepitaxial InxGal-xAs by molecular beam epitaxy Surf. Sci. 86 137 - 143 (1979)
Ihm, J., Lam, P.K., Cohen, M.L. T Electronic structure of the (001)InAs-GaSb superlattice Phys. Rev. B 20 4120–4125 (1979)
Ivanov, I., Pollmann, J. T Microscopic approach to the quantum size effect in superlattices Solid State Commun. 32 869 - 872 (1979)
Jacobi, K., Muschwitz, C. v., Ranke, W. Angular resolved UPS of surface states on Ga As (111) prepared by molecular beam epitaxy Surf. Sci. 82 270–282 (1979)
Joyce, B.A. R Present status and future directions for MBE Surf. Sci. 86 92–101 (1979)
Kawamura, Y., Ikeda, M., Asahi, H., Okamoto, H. Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy Appl. Phys. Lett. 35 481–484 (1979)
Kawamura, Y., Okamoto, H. Lattice deformation and misorientation of In(x)Ga(1-x)As epitaxial layers grown on InP substrates by molecular beam epitaxy J. Appl. Phys. 50 4457–4458 (1979)
Larsen, P.K., Neave, J.H., Joyce, B.A. Angular resolved photoemission from surface states on reconstructed (100) Ga As surfaces J. Phys. C 12 L869–L874 (1979)
Laurence, G. f Simondet, F., Saget, P. Combined RHEED-AES study of the thermal treatment of (001) Ga As surface prior to MBE growth Appl. Phys. Lett. 19 63 - 70 (1979)
Ludeke, R., Ley, L. Surface effects in X-ray photoemission from Ga As Inst. Phys. Conf. Ser. 43 1069–1072 (1979)
Luscher, P.E., Collins, D.M R Design considerations for molecular beam epitaxy
Systems Prog. Crystal Growth Charact. 2 15–32 (1979)
Madhukar, A., Dandekar, N. V., Nucho, R.N. T Two-dimensional effects and effective masses of the InAs/GaSb(001) superlattices J. Vac. Sci. Technol. 16 1507–1511 (1979)
Madhukar, A., Nucho, R.N. T The electronic structure of InAs/Ga As (001) superlattices - two dimensional effects Solid State Commun. 32 331–336 (1979)
Marra, W.C., Eisenberger, P., Cho, A.Y. X-ray total-external-reflection-Bragg diffractions A structural study of the Ga As-Al interface J. Appl. Phys. 50 6927–6933 (1979)
Massies, J., Chaplart, J., Linh, N.T. New results in the study of the aluminium epitaxial
growth on gallium arsenide (001) Solid State Commun. 32 707–709 (1979)
Massies, J., Devoldere, P., Linh, N.T. Work function measurements on MBE Ga As (001) layers J. Vac. Sci. Technol. 16 1244–1247 (1979)
Massies, J., Etienne, P., Linh, N.T. The interaction of silver and aluminium on gallium
arsenide (001) surfaces a study by MBE and associated techniques Surf. Sci. 80 550–556 (1979)
Miller, R.C., Kleinman, D.A., Gossard, A.C. Electron spin orientation in optically pumped Ga As-AlxGa1-xAs multilayer structures Inst. Phys. Conf. Ser. 43 1043–1046 (1979)
Morkoc, H., Cho, A.Y. High-purity Ga As and Cr-doped Ga As epitaxial layers by MBE
J. Appl. Phys. 50 6413–6416 (1979)
Nakao, K. T Electronic band structure of superlattices in magnetic fields J. Phys. Soc. Jpn. 46 1669–1670 (1979)
Narayanamurti, V., Stoermer, H.L., Chin, M.A., Gossard, A.C., Wiegmann, W. Selective transmission of high-frequency phonons by a superlattice: the “dielectric” phonon filter Phys. Rev. Lett. 43 2012–2016 (1979)
Norris, M.T., Stanley, C.R. Substrate temperature limits for epitaxy of InP by MBE Appl. Phys. Lett. 35 617–620 (1979)
Petroff, P.M., Gossard, A.C., Savage, A., Wiegmann, W. Molecular beam epitaxy of Se and Gal-xAlxAs ultra thin film super1attices J. Cryst. Growth 46 172–178 (1979)
Pinczuk, A., Stoermer, H.L., Dingle, R., Worlock, J.M., Wiegmann, W., Gossard, A.C. Observation of intersubband excitations in a multilayer two dimensional electron gas Solid State Commun. 32 1001–1003 (1979)
Pinczuk, A., Stoermer, H.L., Dingle, R., Worlock, J.M., Wiegmann, W., Gossard, A.C.
R Inelastic light scattering by the two dimensional electrons in semiconductor heterojunction in “Light Scattering in Solids”, Eds. J.L.Birman, H.Z.Cummins, K.K.Rebance (Plenum Press, New York, 1979) 307–314 (1979)
Ploog, K. R Surface studies during molecular beam epitaxy of gallium arsenide
J. Vac. Sci. Technol. 16 838–846 (1979)
Ploog, K. R Anreicherung von Ladungstraegern an der Grenzflaeche zweier Halbleiter mit unterschiedlichem Bandabstand Elektronik Industrie 10, Heft 11 13–14 (1979)
Ploog, K., Fischer, A., Kuenzel, H. Improved p/n junctions in Ge-doped Ga As grown by
molecular beam epitaxy Appl. Phys. 18 353–356 (1979)
Ploog, K., Fischer, A., Trommer, R., Hirose, M. MBE-grown insulating oxide films on Ga As J. Vac. Sci. Technol. 16 290–294 (1979)
Sai-Halasz, G. A. R Semiconductor super1attices Inst. Phys. Conf. Ser. 43 21–30 (1979)
Sakaki, H., Chang, L.L., Esaki, L. Subband-structure related anisotropy in negative magnetoresistivity of semiconductor super1attices Inst. Phys. Conf. Ser. 43 737–740 (1979)
Schulman, J.N., McGill, T.C. T Electronic properties of the AlAs-Ga As (001) interface
and superlattice Phys. Rev. B 19 6341–6349 (1979)
Scott, G.B., Roberts, J.S. Photoluminescence in III-V compounds grown by MBE
Inst. Phys. Conf. Ser. 45 181–189 (1979)
Shimanoe, T., Muratani, T., Nakatani, M., Otsubo, M., Mitsui, S. High quality Si-doped Ga As layers grown by molecular beam epitaxy Surf. Sci. 86 126–136 (1979)
Spencer, M., Stall, R.A., Eastman, L.F., Wood, C.E.C. Characterization of grain bounderies using deep level transient spectroscopy J. Appl. Phys. 50 8006–8009 (1979)
Stall, R.A., Wood, C.E.C., Board, K., Eastman, L.F. Ultra low resistance Ohmic contacts to n-Ga As Electron. Lett. 15 800–801 (1979)
Stoermer, H.L., Dingle, R., Gossard, A.C., Wiegmann, W., Sturge, M.D. Two-dimensional electron gas at differentially doped Ga As-AlxGa1-xAs heterojunction interface
J. Vac. Sci. Technol. 16 1517–1519 (1979)
Stoermer, H.L., Dingle, R., Gossard, A.C., Wiegmann, W., Sturge, M.D. Two-dimensional electron gas at a semiconductor-semiconductor interface Solid State Commun. 29 705–707 (1979)
Suzuki, T., Konagai, M., Takahashi, K. Electrical properties of Zn+ doped (AlGa)As prepared by molecular beam epitaxy and its use in shallow junction solar cells Thin Solid Films 60 85–89 (1979)
Tsang, W.T. Low-current-threshold and high-lasing uniformity Ga As-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 34 473–475 (1979)
Tsang, W.T., Ilegems, M. The preparation of Ga As thin-film optical components by molecular beam epitaxy using Si shadow masking technique Appl. Phys. Lett. 35 792–795 (1979)
Tsang, W.T., Olmstead, M., Chang, R.P.H. Multidielectrics for Ga As MIS devices using composition-graded Alx Gal-x As and oxidized AlAs Appl. Phys. Lett. 34 408–410 (1979)
Tsang, W.T., Weisbuch, C., Miller, R.C., Dingle, R. Current injection Ga As-Al(x)Ga(1-x)As multi-quantum-well heterostructure lasers prepared by molecular beam epitaxy Appl. Phys. Lett. 35 673–675 (1979)
Weimann, G. Electrical characterization of n-type Ga As films grown by molecular beam epitaxy Phys. Status Solidi A 53 K173–K176 (1979)
Weimann, G., Schlapp, W. Molekularstrahl-Epitaxie von Ga As-Schichten Technischer Bericht (FI beim FTZ) No. 65 TBr 17 1–38 (1979)
Wood, C.E.C., Woodcock, J.M., Harris, J.J. Low-compensation n-type and flat-surface p-type Ge-doped Ga As by molecular beam epitaxy Inst. Phys. Conf. Ser. 45 28–37 (1979)
Yano, M., Takase, T., Kimata, M. Heteroepitaxial InSb films grown by molecular beam
Epitaxy Phys. Status Solidi A 54 707–713 (1979)
Epitaxy Phys. Status Solidi A 54 707–713 (1979)
Yokoyama, S., Yukitomo, K., Hirose, M., Osaka, Y. Ga As M0S structures with A1203 grown by molecular beam reactidn under UV excitation Thin Solid Films 56 81–88 (1979)
Yokoyama, S., Yukitotno, K., Hirose, M., Osaka, Y., Fischer, A., Ploog, K. Ga As M0S structures with Al203 grown by molecular beam reaction Surf. Sci. 86 835–840 (1979)
Yoshida, S., Misawa, S., Fujii, Y., Takada, S., Hayakawa, H., Gonda, S., Itoh, A. Reactive molecular beam epitaxy of aluminium nitride J. Vac. Sci. Technol. 16 990–993 (1979)
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Ploog, K., Graf, K. (1984). Subject Categories and References Year 1979. In: Molecular Beam Epitaxy of III–V Compounds. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69580-3_11
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