Skip to main content

Subject Categories and References Year 1979

  • Chapter
Molecular Beam Epitaxy of III–V Compounds
  • 119 Accesses

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Abstreiter, S., Ploog, K. Inelastic light scattering from a quasi-two-dimensional electron system in Ga As-Al(x)Ga(1-x)As heterojunctions Phys. Rev. Lett. 42 1308–1311 (1979)

    Article  ADS  Google Scholar 

  2. Ando, T., Mori, S. T Electronic properties of a semiconductor superlattice. I. Self-consistent calculation of subband structure and optical spectra J. Phys. Soc. Jpn. 47 1518–1528 (1979)

    Article  ADS  Google Scholar 

  3. Andreoni, W., Car, R., Baldereschi, A. T Effects of cation order on the energy bands of Ga As-AlAs heterostructures Inst. Phys. Conf. Ser. 43 733–736 (1979)

    Google Scholar 

  4. Arthur, J.R., Jr., Johnson, W.C. R Superlattices Ind. Res. Dev. 21 No. 1 109–116 (1979)

    Google Scholar 

  5. Asahi, H., Okamoto, H., Ikeda, M., Kawamura, Y. Properties of molecular beam epitaxial In(x)Ga(1-x)As (x=0.53) layers grown on InP substrates Jpn. J. Appl. Phys. 18 565–573 (1979)

    Article  ADS  Google Scholar 

  6. Bachrach, R.Z. R Semiconductor surface and crystal physics studied by MBE Prog. Crystal Growth Charact. 2 115–144 (1979)

    Article  Google Scholar 

  7. Bachrach, R.Z., Bauer, R.S., McMenamin, J.C., Bianconi, A. Microscopic aspects of metal-Ga As interface formation Inst. Phys. Conf. Ser. 43 1073–1076 (1979)

    Google Scholar 

  8. Bandy, S.G., Collins, D.M., Mishimoto, C.K. Low-noise microwave F.E.T.S. fabricated by molecular-beam epitaxy Electron. Lett. 15 218–219 (1979)

    Article  ADS  Google Scholar 

  9. Bean, J.C., Dingle, R. Luminescent p-Ga As grown by zinc ion doped MBE Appl. Phys. Lett. 35 925–927 (1979)

    Article  ADS  Google Scholar 

  10. Berson, B. R Making 1980’s semiconductors: molecules, electrons, and ions MSN Microwave Syst. News 9 No. 9 45–56 (1979)

    Google Scholar 

  11. Blanchet, R.C., Delhomme, B.J., Urgell, J.J. Analyse structurale du procede depitaxie par jets moleculairess Application a l’arseniure de gallium L’onde electrique 59 83–92 (1979)

    Google Scholar 

  12. Bluyssen, H.J.A., Maan, J.C., Wyder, P., Chang, L.L., Esaki, L. Cyclotron resonance in an InAs-GaSb superlattice Solid State Commun. 31 35–38 (1979)

    Article  ADS  Google Scholar 

  13. Burnhaoi, R.D., Scifres, D.R. Integrated optical devices fabricated by MBE Prog. Crystal Growth Charact. 2 95–113 (1979)

    Article  Google Scholar 

  14. Carenco, A., Menigaux, L., Alexandre, F., Abdalla, M.I., Brenac, A. Directional coupler switch in molecular-beam epitaxy Ga As Appl. Phys. Lett. 34 755–757 (1979)

    Article  ADS  Google Scholar 

  15. Casey, H.C., Jr., Cho, A.Y., Foy, P.W. Reduction of surface recombination current with oxygen-doped A10.5Ga0.5As surface layer on n-type Ga As J. Vac. Sci. Technol. 16 1398–1401 (1979)

    Article  ADS  Google Scholar 

  16. Casey, H.C., Jr., Cho, A.Y., Foy, P.W. Reduction of surface recombination current in Ga As p-n junctions Appl. Phys. Lett. 34 594–596 (1979)

    Article  ADS  Google Scholar 

  17. Casey, H.C., Jr., Cho, A.Y., Lang, D.V., Nicollian, E.H., Foy, P.W. Investigation of heterojunctions for MIS devices with oxygen-doped Alx Gal-x As on n-type Ga As J. Appl. Phys. 50 3484–3491 (1979)

    Article  ADS  Google Scholar 

  18. Chang, C.A., Segmueller, A. Substrate effect on the lattice constants of the MBE-grown In(1-x)Ga(x)As and GaSb(1-y)As(y) J. Vac. Sci. Technol. 16 285–286 (1979)

    Article  ADS  Google Scholar 

  19. Chang, L.L., Esaki, L. R Semiconductor superlattices by MBE and their characterization Prog. Crystal Growth Charact. 2 3–14 (1979)

    Article  Google Scholar 

  20. Chang, L.L., Kawai, N.J., Sai-Halasz, G.A., Ludeke, R., Esaki, L. Observation of semiconductor-semimetal transition in InAs-GaSb superlattices Appl. Phys. Lett. 35 939–942 (1979)

    Article  ADS  Google Scholar 

  21. Cho, A.Y. R Recent developments in molecular beam epitaxy (MBE) J. Vac. Sci. Technol. 16 275–284 (1979)

    Article  ADS  Google Scholar 

  22. Collins, D.M. The use of SnTe as the source of donor impurities in Ga As grown by molecular beam epitaxy Appl. Phys. Lett. 35 67–70 (1979)

    Article  ADS  Google Scholar 

  23. Covington, D.W., Litton, C.W., Reynolds, D.C., Almassy, R.J., McCoy, G.L. R Photoluminescence and electrical characterization of MBE Ga As epilayers: a recent survey Inst. Phys. Conf. Ser. 45 171–180 (1979)

    Google Scholar 

  24. Covington, D.W., Meeks, E.L. R Unintentional dopants incorporated in Ga As layers grown by molecular beam epitaxy J. Vac. Sci. Technol. 16 847–850 (1979)

    Article  ADS  Google Scholar 

  25. Cullis, A.G., Farrow, R.F.C. A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InP Thin Solid Films 58 197–202 (1979)

    Article  ADS  Google Scholar 

  26. DiLorenzo, J.V., Niehaus, W.C., Cho, A.Y. Nonalloyed and in situ Ohmic contacts to highly doped n-type Ga As layers grown by molecular beam epitaxy (MBE) for field-effect transistors J. Appl. Phys. 50 951–954 (1979)

    Article  ADS  Google Scholar 

  27. Dingle, R., Stoermer, H.L., Gossard, A.C., Wiegmann, W. R Electronic properties of modulation-doped Ga As-AlGa As heterojunction superlattices Inst. Phys. Conf. Ser. 45 248–255 (1979)

    Google Scholar 

  28. Doehler, G.H. T Doping superlattices J. Vac. Sci. Technol. 16 851–856 (1979)

    Article  ADS  Google Scholar 

  29. Doehler, G.H., Ploog, K. R Periodic doping structure in Ga As Progr. Crystal Growth Charact. 2 145–168 (1979)

    Article  Google Scholar 

  30. Esaki, L., Chang, L.L. R Semiconductor superlattices in high magnetic fields J. Magn. Magnetic Mater. 11 208–215 (1979)

    Article  ADS  Google Scholar 

  31. Esaki, L., Sai-Halasz, G.A. T Novel microwave/infrared detectors with semiconductor superlattices IBM Tech. Disclosure Bull. 22 1262–1264 (1979)

    Google Scholar 

  32. Fan, J.C.C., Calawa, A.R., Chapman, R.L., Turner, G.W. Efficient shallow-homojunction Ga As solar cells by molecular beam epitaxy Appl. Phys. Lett. 35 804–806 (1979)

    Article  ADS  Google Scholar 

  33. Farrow, R.F.C., Cullis, A.G., Grant, A.J., Jones, G.R. Molecular beam epitaxy and field emission deposition for metal film growth on III-V compound semiconductors - a comparative study Thin Solid Films 58 189–196 (1979)

    Article  ADS  Google Scholar 

  34. Fujii, T., Suzuki, H., Hiyamizu, S. Sn-doped Ga As films grown by molecular beam epitaxy Fujitsu Sci. Tech. J. 121–130 (1979)

    Google Scholar 

  35. Barrier, C.M., Su, C. Y., Shen, Y.D., Lee, C.S., Pearson, G.L., Spicer, W.E. Interface studies of Al(x)Ga(1-x)As-Ga As heterojunctions J. Appl. Phys. 50 3383–3389 (1979)

    Article  ADS  Google Scholar 

  36. Gibbs, H.M., Bossard, A.C., McCall, S.L., Passner, A., Wiegmann, W., Venkatesan, T.N.C. Saturation of the free exciton resonance in Ga As Solid State Commun. 30 271–275 (1979)

    Article  ADS  Google Scholar 

  37. Bibbs, H.H., McCall, S.L., Bossard, A.C., Passner, A., Wiegmann, W., Venkatesan, T.N.C. Controlling light with lights optical bistability and optical modulation in “Laser Spectroscopy IV”, Eds. H. Walther and K.W. Rothe (Springer Verlag, Berlin, Heidelberg, New York, 1979) 441–450 (1979)

    Google Scholar 

  38. Bibbs, H.M., McCall, S.L., Venkatesan, T.N.C., Gossard, A.C., Passner, A., Wiegmann, W. Optical bistability in semiconductors Appl. Phys. Lett. 35 451–453 (1979)

    Article  ADS  Google Scholar 

  39. Bibbs, H.M., Venkatesan, T.N.C., McCall, S.L., Passner, A., Bossard, A.C., Wiegmann, W. Optical modulation by optical tuning of a cavity Appl. Phys. Lett. 34 511–514 (1979)

    Article  ADS  Google Scholar 

  40. Bossard, A.C. R Ga As/AlAs layered films Thin Solid Films 57 3–13 (1979)

    Article  ADS  Google Scholar 

  41. Brange, J.D., Parker, E.H.C. R Device fabrication for the future? Phys. Bull. 30 20–22 (1979)

    Google Scholar 

  42. Brange, J.D., Parker, E.H.C., King, R.M. Relationship of MBE growth parameters with the

    Google Scholar 

  43. electrical properties of thin (100) InAs epilayers J. Phys. D 12 1601–1612 (1979)

    Google Scholar 

  44. Gulyaev, Y.V., Dvoryankina, G.G., Dvoryankin, V.F., Cherevatski i, N.Y. R Molecular beam epitaxy - a promising method for fabrication of integrated-optics devices. I. Injection lasers

    Google Scholar 

  45. Gulyaev, Y.V., Dvoryankina, G.G., Dvoryankin, V.F., Cherevatski i, N.Y. R Molecular beam epitaxy - a promising method for fabrication of integrated-optics devices. I. Injection lasers

    Google Scholar 

  46. Kvantovaya Electron. (Moskow) 6 5–24 (1979)

    Google Scholar 

  47. Hess, K. T Impurity and phonon scattering in layered structures Appl. Phys. Lett. 35 484–486 (1979)

    Article  ADS  Google Scholar 

  48. Hess, K., Morkoc, H., Shichijo, H., Streetman, B.G. Negative differential resistance through real-space electron transfer Appl. Phys. Lett. 35 469–471 (1979)

    Article  ADS  Google Scholar 

  49. Hierl, T.L., Collins, D.M. Ga As Read IMPATT diodes by molecular beam epitaxy

    Google Scholar 

  50. Hiyamizu, S., Fujii, T., Nanbu, K., Maekawa, S., Hisatsugu, T. Laser operation of heteroepitaxial InxGal-xAs by molecular beam epitaxy Surf. Sci. 86 137 - 143 (1979)

    Google Scholar 

  51. Hiyamizu, S., Fujii, T., Nanbu, K., Maekawa, S., Hisatsugu, T. Laser operation of heteroepitaxial InxGal-xAs by molecular beam epitaxy Surf. Sci. 86 137 - 143 (1979)

    Article  ADS  Google Scholar 

  52. Ihm, J., Lam, P.K., Cohen, M.L. T Electronic structure of the (001)InAs-GaSb superlattice Phys. Rev. B 20 4120–4125 (1979)

    Google Scholar 

  53. Ivanov, I., Pollmann, J. T Microscopic approach to the quantum size effect in superlattices Solid State Commun. 32 869 - 872 (1979)

    Article  ADS  Google Scholar 

  54. Jacobi, K., Muschwitz, C. v., Ranke, W. Angular resolved UPS of surface states on Ga As (111) prepared by molecular beam epitaxy Surf. Sci. 82 270–282 (1979)

    Article  ADS  Google Scholar 

  55. Joyce, B.A. R Present status and future directions for MBE Surf. Sci. 86 92–101 (1979)

    Article  ADS  Google Scholar 

  56. Kawamura, Y., Ikeda, M., Asahi, H., Okamoto, H. Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy Appl. Phys. Lett. 35 481–484 (1979)

    Article  ADS  Google Scholar 

  57. Kawamura, Y., Okamoto, H. Lattice deformation and misorientation of In(x)Ga(1-x)As epitaxial layers grown on InP substrates by molecular beam epitaxy J. Appl. Phys. 50 4457–4458 (1979)

    Article  ADS  Google Scholar 

  58. Larsen, P.K., Neave, J.H., Joyce, B.A. Angular resolved photoemission from surface states on reconstructed (100) Ga As surfaces J. Phys. C 12 L869–L874 (1979)

    Google Scholar 

  59. Laurence, G. f Simondet, F., Saget, P. Combined RHEED-AES study of the thermal treatment of (001) Ga As surface prior to MBE growth Appl. Phys. Lett. 19 63 - 70 (1979)

    ADS  Google Scholar 

  60. Ludeke, R., Ley, L. Surface effects in X-ray photoemission from Ga As Inst. Phys. Conf. Ser. 43 1069–1072 (1979)

    Google Scholar 

  61. Luscher, P.E., Collins, D.M R Design considerations for molecular beam epitaxy

    Google Scholar 

  62. Systems Prog. Crystal Growth Charact. 2 15–32 (1979)

    Google Scholar 

  63. Madhukar, A., Dandekar, N. V., Nucho, R.N. T Two-dimensional effects and effective masses of the InAs/GaSb(001) superlattices J. Vac. Sci. Technol. 16 1507–1511 (1979)

    Article  ADS  Google Scholar 

  64. Madhukar, A., Nucho, R.N. T The electronic structure of InAs/Ga As (001) superlattices - two dimensional effects Solid State Commun. 32 331–336 (1979)

    Article  ADS  Google Scholar 

  65. Marra, W.C., Eisenberger, P., Cho, A.Y. X-ray total-external-reflection-Bragg diffractions A structural study of the Ga As-Al interface J. Appl. Phys. 50 6927–6933 (1979)

    Article  ADS  Google Scholar 

  66. Massies, J., Chaplart, J., Linh, N.T. New results in the study of the aluminium epitaxial

    Google Scholar 

  67. growth on gallium arsenide (001) Solid State Commun. 32 707–709 (1979)

    Google Scholar 

  68. Massies, J., Devoldere, P., Linh, N.T. Work function measurements on MBE Ga As (001) layers J. Vac. Sci. Technol. 16 1244–1247 (1979)

    Article  ADS  Google Scholar 

  69. Massies, J., Etienne, P., Linh, N.T. The interaction of silver and aluminium on gallium

    Google Scholar 

  70. arsenide (001) surfaces a study by MBE and associated techniques Surf. Sci. 80 550–556 (1979)

    Google Scholar 

  71. Miller, R.C., Kleinman, D.A., Gossard, A.C. Electron spin orientation in optically pumped Ga As-AlxGa1-xAs multilayer structures Inst. Phys. Conf. Ser. 43 1043–1046 (1979)

    Google Scholar 

  72. Morkoc, H., Cho, A.Y. High-purity Ga As and Cr-doped Ga As epitaxial layers by MBE

    Google Scholar 

  73. J. Appl. Phys. 50 6413–6416 (1979)

    Google Scholar 

  74. Nakao, K. T Electronic band structure of superlattices in magnetic fields J. Phys. Soc. Jpn. 46 1669–1670 (1979)

    Article  ADS  Google Scholar 

  75. Narayanamurti, V., Stoermer, H.L., Chin, M.A., Gossard, A.C., Wiegmann, W. Selective transmission of high-frequency phonons by a superlattice: the “dielectric” phonon filter Phys. Rev. Lett. 43 2012–2016 (1979)

    Article  ADS  Google Scholar 

  76. Norris, M.T., Stanley, C.R. Substrate temperature limits for epitaxy of InP by MBE Appl. Phys. Lett. 35 617–620 (1979)

    Article  ADS  Google Scholar 

  77. Petroff, P.M., Gossard, A.C., Savage, A., Wiegmann, W. Molecular beam epitaxy of Se and Gal-xAlxAs ultra thin film super1attices J. Cryst. Growth 46 172–178 (1979)

    Article  ADS  Google Scholar 

  78. Pinczuk, A., Stoermer, H.L., Dingle, R., Worlock, J.M., Wiegmann, W., Gossard, A.C. Observation of intersubband excitations in a multilayer two dimensional electron gas Solid State Commun. 32 1001–1003 (1979)

    Article  ADS  Google Scholar 

  79. Pinczuk, A., Stoermer, H.L., Dingle, R., Worlock, J.M., Wiegmann, W., Gossard, A.C.

    Google Scholar 

  80. R Inelastic light scattering by the two dimensional electrons in semiconductor heterojunction in “Light Scattering in Solids”, Eds. J.L.Birman, H.Z.Cummins, K.K.Rebance (Plenum Press, New York, 1979) 307–314 (1979)

    Google Scholar 

  81. Ploog, K. R Surface studies during molecular beam epitaxy of gallium arsenide

    Google Scholar 

  82. J. Vac. Sci. Technol. 16 838–846 (1979)

    Google Scholar 

  83. Ploog, K. R Anreicherung von Ladungstraegern an der Grenzflaeche zweier Halbleiter mit unterschiedlichem Bandabstand Elektronik Industrie 10, Heft 11 13–14 (1979)

    Google Scholar 

  84. Ploog, K., Fischer, A., Kuenzel, H. Improved p/n junctions in Ge-doped Ga As grown by

    Google Scholar 

  85. molecular beam epitaxy Appl. Phys. 18 353–356 (1979)

    Google Scholar 

  86. Ploog, K., Fischer, A., Trommer, R., Hirose, M. MBE-grown insulating oxide films on Ga As J. Vac. Sci. Technol. 16 290–294 (1979)

    Article  ADS  Google Scholar 

  87. Sai-Halasz, G. A. R Semiconductor super1attices Inst. Phys. Conf. Ser. 43 21–30 (1979)

    Google Scholar 

  88. Sakaki, H., Chang, L.L., Esaki, L. Subband-structure related anisotropy in negative magnetoresistivity of semiconductor super1attices Inst. Phys. Conf. Ser. 43 737–740 (1979)

    Google Scholar 

  89. Schulman, J.N., McGill, T.C. T Electronic properties of the AlAs-Ga As (001) interface

    Google Scholar 

  90. and superlattice Phys. Rev. B 19 6341–6349 (1979)

    Google Scholar 

  91. Scott, G.B., Roberts, J.S. Photoluminescence in III-V compounds grown by MBE

    Google Scholar 

  92. Inst. Phys. Conf. Ser. 45 181–189 (1979)

    Google Scholar 

  93. Shimanoe, T., Muratani, T., Nakatani, M., Otsubo, M., Mitsui, S. High quality Si-doped Ga As layers grown by molecular beam epitaxy Surf. Sci. 86 126–136 (1979)

    Article  ADS  Google Scholar 

  94. Spencer, M., Stall, R.A., Eastman, L.F., Wood, C.E.C. Characterization of grain bounderies using deep level transient spectroscopy J. Appl. Phys. 50 8006–8009 (1979)

    Article  ADS  Google Scholar 

  95. Stall, R.A., Wood, C.E.C., Board, K., Eastman, L.F. Ultra low resistance Ohmic contacts to n-Ga As Electron. Lett. 15 800–801 (1979)

    Article  ADS  Google Scholar 

  96. Stoermer, H.L., Dingle, R., Gossard, A.C., Wiegmann, W., Sturge, M.D. Two-dimensional electron gas at differentially doped Ga As-AlxGa1-xAs heterojunction interface

    Google Scholar 

  97. J. Vac. Sci. Technol. 16 1517–1519 (1979)

    Google Scholar 

  98. Stoermer, H.L., Dingle, R., Gossard, A.C., Wiegmann, W., Sturge, M.D. Two-dimensional electron gas at a semiconductor-semiconductor interface Solid State Commun. 29 705–707 (1979)

    Article  ADS  Google Scholar 

  99. Suzuki, T., Konagai, M., Takahashi, K. Electrical properties of Zn+ doped (AlGa)As prepared by molecular beam epitaxy and its use in shallow junction solar cells Thin Solid Films 60 85–89 (1979)

    Article  ADS  Google Scholar 

  100. Tsang, W.T. Low-current-threshold and high-lasing uniformity Ga As-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 34 473–475 (1979)

    Article  ADS  Google Scholar 

  101. Tsang, W.T., Ilegems, M. The preparation of Ga As thin-film optical components by molecular beam epitaxy using Si shadow masking technique Appl. Phys. Lett. 35 792–795 (1979)

    Article  ADS  Google Scholar 

  102. Tsang, W.T., Olmstead, M., Chang, R.P.H. Multidielectrics for Ga As MIS devices using composition-graded Alx Gal-x As and oxidized AlAs Appl. Phys. Lett. 34 408–410 (1979)

    Article  ADS  Google Scholar 

  103. Tsang, W.T., Weisbuch, C., Miller, R.C., Dingle, R. Current injection Ga As-Al(x)Ga(1-x)As multi-quantum-well heterostructure lasers prepared by molecular beam epitaxy Appl. Phys. Lett. 35 673–675 (1979)

    Article  ADS  Google Scholar 

  104. Weimann, G. Electrical characterization of n-type Ga As films grown by molecular beam epitaxy Phys. Status Solidi A 53 K173–K176 (1979)

    Google Scholar 

  105. Weimann, G., Schlapp, W. Molekularstrahl-Epitaxie von Ga As-Schichten Technischer Bericht (FI beim FTZ) No. 65 TBr 17 1–38 (1979)

    Google Scholar 

  106. Wood, C.E.C., Woodcock, J.M., Harris, J.J. Low-compensation n-type and flat-surface p-type Ge-doped Ga As by molecular beam epitaxy Inst. Phys. Conf. Ser. 45 28–37 (1979)

    Google Scholar 

  107. Yano, M., Takase, T., Kimata, M. Heteroepitaxial InSb films grown by molecular beam

    Google Scholar 

  108. Epitaxy Phys. Status Solidi A 54 707–713 (1979)

    Google Scholar 

  109. Epitaxy Phys. Status Solidi A 54 707–713 (1979)

    Google Scholar 

  110. Yokoyama, S., Yukitomo, K., Hirose, M., Osaka, Y. Ga As M0S structures with A1203 grown by molecular beam reactidn under UV excitation Thin Solid Films 56 81–88 (1979)

    Article  ADS  Google Scholar 

  111. Yokoyama, S., Yukitotno, K., Hirose, M., Osaka, Y., Fischer, A., Ploog, K. Ga As M0S structures with Al203 grown by molecular beam reaction Surf. Sci. 86 835–840 (1979)

    Article  ADS  Google Scholar 

  112. Yoshida, S., Misawa, S., Fujii, Y., Takada, S., Hayakawa, H., Gonda, S., Itoh, A. Reactive molecular beam epitaxy of aluminium nitride J. Vac. Sci. Technol. 16 990–993 (1979)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1984 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Ploog, K., Graf, K. (1984). Subject Categories and References Year 1979. In: Molecular Beam Epitaxy of III–V Compounds. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69580-3_11

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-69580-3_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-13177-9

  • Online ISBN: 978-3-642-69580-3

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics