Introduction

Abstract

Molecular beam epitaxy (MBE) has now become a viable and strongly competitive thin-film growth technique in many research and development laboratories, and a variety of materials, including semiconductors, metals and insulators, have been grown as epitaxial films. MBE growth of III–V compound semiconductors and investigation of the tailored electronic properties of refined semiconductor structures have received most attention. In the past three years interest in molecular beam epitaxy has expanded dramatically, and the number of MBE-related technical papers published per year is growing exponentially (Fig. 1). This ever-increasing flood of papers makes it hard to follow up, particularly for young materials scientists newly entering this very exciting field. We have, therefore, compiled a bibliography of

over 1600 references spanning the first 25 years of activities in molecular beam epitaxy of III–V compounds. References are listed with the title, using first an annual principle of classification, with the exception of early works, which are grouped together up to 1970. Within this annual classification, papers are listed alphabetically for each year by first authors in chronological succession. All citations are numbered consecutively. Citations are limited to papers that had been published up to mid-December 1983. English translations are cited if available. Review papers are marked by “R” below the number.