Abstract
Czochralski grown (CZ) Si wafers presently used for VLSI are of high quality, but still contain oxygen and carbon as residual impurities. These impurities are responsible for the formation of microdefects. Especially, oxygen suppresses the wafer warpage and deformation during various heat treatments in device-fabrication processes. Thus, these impurities have strong influence on the device-production yield. Therefore, the understanding of their behaviours, and both the analysis and the control of the impurities are of importance.
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© 1986 Springer-Verlag Berlin Heidelberg
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Tarui, Y. (1986). Crystal Technology. In: Tarui, Y. (eds) VLSI Technology. Springer Series in Electrophysics, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69192-8_5
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DOI: https://doi.org/10.1007/978-3-642-69192-8_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-69194-2
Online ISBN: 978-3-642-69192-8
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