Abstract
The ability to control dose in terms of absolute value, repeatability from wafer to wafer, and uniformity across a wafer is the most important characteristic of any implanter.
During implantation wafers can also be exposed to particles originating from the residual gases and the interior surfaces of the vacuum system in addition to the particles generated in the ion source itself. Furthermore the measurement accuracy of the primary ion beam can be complicated by beam interaction with the residual gases and secondary particle effects at the target surface.
The magnitude of these effects will be reviewed and different methods of beam measurement will be discussed.
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© 1983 Springer-Verlag Berlin Heidelberg
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Ryding, G. (1983). Dosimetry and Beam Quality. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation: Equipment and Techniques. Springer Series in Electrophysics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69156-0_33
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DOI: https://doi.org/10.1007/978-3-642-69156-0_33
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