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Faraday Cup Designs for Ion Implantation

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Ion Implantation Techniques

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 10))

Abstract

As a general materials processing approach, ion implantation possesses tremendous leverage due to its insensitivity to chemical reactions exhibited by bulk material diffusions, its extendability to large target dimensions, and its ability to be mask-defined with small lateral spreading and controlled depths [1–3], In its practical execution, ion implantation employs the electromagnetic properties of the ions to regulate the energy, species, total flux and areal distribution of the dopant material. A given target response to the incident ions can be used as a continuous monitor of the implant status and, under proper conditions, can provide a means for closed-loop process control.

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Author information

Authors and Affiliations

  1. Hughes Research Laboratories, Malibu, CA, 90265, USA

    Charles M. McKenna

Authors
  1. Charles M. McKenna
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Editor information

Editors and Affiliations

  1. Frauenhofer — Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. of Germany

    Heiner Ryssel

  2. Siemens AG, Balanstraße 73, D-8000, München 80, Fed. Rep. of Germany

    Hans Glawischnig

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© 1982 Springer-Verlag Berlin Heidelberg

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McKenna, C.M. (1982). Faraday Cup Designs for Ion Implantation. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation Techniques. Springer Series in Electrophysics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68779-2_3

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  • DOI: https://doi.org/10.1007/978-3-642-68779-2_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-68781-5

  • Online ISBN: 978-3-642-68779-2

  • eBook Packages: Springer Book Archive

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