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Ion Implantation Techniques pp 3–21Cite as

Ion Implantation System Concepts

  • Conference paper

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 10))

Abstract

Following a description of the principal ion implantation systems, some criteria for the ideal production implanter are given, after which a review of the presently available commercial equipment is presented. The system-limiting aspects, such as throughput, uniformity, wafer heating, energy range, wafer size, charge-up, and contamination, are reported in detail. Finally, some remarks on the operation and control of an ion implanter are made.

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Author information

Authors and Affiliations

  1. Siemens AG, D-8000, München, Fed. Rep. of Germany

    Hans Glawischnig

Authors
  1. Hans Glawischnig
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Editor information

Editors and Affiliations

  1. Frauenhofer — Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. of Germany

    Heiner Ryssel

  2. Siemens AG, Balanstraße 73, D-8000, München 80, Fed. Rep. of Germany

    Hans Glawischnig

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© 1982 Springer-Verlag Berlin Heidelberg

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Glawischnig, H. (1982). Ion Implantation System Concepts. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation Techniques. Springer Series in Electrophysics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68779-2_1

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  • DOI: https://doi.org/10.1007/978-3-642-68779-2_1

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-68781-5

  • Online ISBN: 978-3-642-68779-2

  • eBook Packages: Springer Book Archive

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