Abstract
This article treats deposition techniques used for secondary passivation. Secondary passivation refers to oxide layers, nitride layers and glass films which cover either the first passivation layer or the conductive interconnection levels.
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References
Vossen, J. L.; Kern, W. (Eds): Thin Film Processes, New York, Academic Press 1978
Serikawa, T.; Yachi, T.: Jap. J. Appl. Phys. 20 (1981) L111
Huppertz, H.; Engl, W. L.: IEEE Trans. Electron Devices ED-26 (1979) 658
Kern, W.; Schnable, G. L.; Fisher, A.W.: RCA Rev. 37 (1976) 3
Tung, S. K.; Caffrey, R. E.: Trans. Metall. Soc. AIME 233 (1965) 572
Duffy, M. T.; Kern, W.: RCA Rev. 31 (1970) 742
Kern, W.: Solid State Technol. 18 (12) (1975) 25
Kern, W.; Rosler, R. S.: J. Vac. Sci. Technol. 14 (1977) 1082
Wong, J.; Ghezzo, M.: J. Electrochem. Soc. 122 (1975) 1268
Shibata, M.; Yoshimi, T.; Sugawara, K.: J. Electrochem. Soc. 122 (1975) 157
Sandor, J.: Electrochem. Soc., Ext. Abstr. No. 96 (1962) 228
Kern, W.; Schnable, G. L.: IEEE Trans. Electron Dev. ED-26 (1979) 647
Rosler, R. S.: Solid State Techn. 20 (4) (1977) 63
Rosler, R. S.: Symp. on Low Pressure Chemical Vapor Deposition W. Kern Chairman; Greater New York Chapter, American Vacuum Society, Murray Hill, N.J., March 15, 1978
Alt, L. L.; Ing, Jr., S. W.; Laendle, W. W.: J. Electrochem. Soc. 110 (1963) 445
Reinberg, A. R.: Electrochem. Soc. Ext. Abstr. 74-1 (1974) 19
Rand, M. J.: J. Vac. Sci. Technol. 16 (2) (1979) 420
Rosler, R. S.; Benzing, W. L.; Baldo, J.: Solid State Technol. 19 (6) (1976) 45
Engle, G. M.: Plasma Enhanced Chemical Vapor Processing of Semiconductive Wafers, U.S. patent pending
Rosler, R. S.; Engle, G.M.: Solid State Techn. 22 (12) (1979) 88
v. d. Ven, E. P. G. T.; Sanders, J. A. M.: Electrochem. Soc. Ext. Abtr. 78-2 (1978) 525
Mattson, B.: Solid State Technol. 23 (1) (1980) 60
Egitto, F. D.: J. Electrochem. Soc. 127 (1980) 1354
Reinberg, A. R.: J. Electron. Mater. 8 (1979) 345
Wahl, G.: Thin Solid Films 40 (1977) 13
Fischer, H.: Z. Phys. Chemie, Leipzig, 255 (1973) 773
Spear, K. E.; Wang, M. S.: Solid State Technol. 23 (7) (1980) 63
Erikson, G.: Acta Chem. Scand. 25 (1971) 1651
Erikson, G.; Rosen, E.: Chemica Scripta 4 (1973) 293
Erikson, G.: Chemica Scripta 8 (1975) 100
Sinha, A. K.; Levinstein, H. J.; Smith, T. E.: J. Appl. Phys. 49 (1978) 2423
Sinha, A. K.; Levinstein, H. J.; Smith, T. E.; Quintana, G.; Haszko, S. E.: J. Electrochem. Soc. 125 (1978) 601
Sinha, A. K.; Smith, T. E.: J. Appl. Phys. 49 (1978) 2756
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© 1981 Springer-Verlag Berlin Heidelberg
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Doering, E. (1981). Deposition Technology of Insulating Films. In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_33
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DOI: https://doi.org/10.1007/978-3-642-68247-6_33
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