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Trapping Characteristics in SiO2

  • Conference paper
Insulating Films on Semiconductors

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 7))

Abstract

Avalanche injection is a valuable tool for use in investigating trapping characteristics. The analysis of the data can in a number of cases be improved by the use of the Zeldovitsj equation. For a number of charging curves reproduced from published data this yields an excellent fit and a large reduction in scatter of the capture cross sections. A model is presented based on trapping site generation.

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Author information

Authors and Affiliations

  1. Philips Research Laboratory, 5600 MD, Eindhoven, The Netherlands

    D. R. Wolters & J. F. Verwey

Authors
  1. D. R. Wolters
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  2. J. F. Verwey
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Editor information

Editors and Affiliations

  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Glückstraße 9, D-8520, Erlangen, Fed. Rep. of Germany

    Max J. Schulz  & Gerhard Pensl  & 

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© 1981 Springer-Verlag Berlin Heidelberg

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Wolters, D.R., Verwey, J.F. (1981). Trapping Characteristics in SiO2 . In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_16

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  • DOI: https://doi.org/10.1007/978-3-642-68247-6_16

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-68249-0

  • Online ISBN: 978-3-642-68247-6

  • eBook Packages: Springer Book Archive

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