Abstract
It appears that insufficient control over the ultrathin (25–50 Å) oxides growth process and stability still limits the further development of MIS tunnel devices such as solar cells, various transistor structures, and switching devices.
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References
R.B. Beck, M. Patyra, J. Ruzyłło, A. Jakubowski: Thin Solid Films 67, 261 (1980)
R.A. Clarke, J. Shewchun: Solid State Electron. 14, 957 (1971)
J. Ruzyłło: IEEE Electron Dev Lett. EDL-1, 197 (1980)
S. Krawczyk: This volume
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© 1981 Springer-Verlag Berlin Heidelberg
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Beck, R.B., Jakubowski, A., Ruzyłło, J. (1981). Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma Anodization. In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_11
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DOI: https://doi.org/10.1007/978-3-642-68247-6_11
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