Abstract
This article reviews the Temperature Gradient Solution (TGS) growth method (sometimes also named Synthesis, Solute Diffusion technique) of preparing bulk crystals of III–V semiconductors. This method is an interesting alternative to the conventional Liquid Encapsulation Czochralski (LEG) technique because the properties of this material are similar to those of epitaxial layers. Therefore, production of devices is possible without using liquid or vapour phase epitaxy. The principle of the method is described using GaP as an example. Experimental techniques for growing single crystals with controlled doping are thoroughly discussed. Growth of other binary compounds (e.g. InP) is also described. A variation of the TGS method can be applied to the growth of ternary compounds (mainly In1-x GaxP). The defect densities and electrical properties of TGS grown crystals are compared to the corresponding properties of LEC material. Preparation and properties of LED’s based on TGS grown materials are treated in detail With further development work the TGS growth method may become competitive with the standard production process (LEC plus epitaxy) for LED materials.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Thurmond, C. D.: J. Phys. Chem. Solids 26, 785 (1965)
Jordan, A. S., Von Neida, A. R., Caruso, R., Kim, C. K.: J. Electrochem. Soc. 121, 153 (1974)
Rodot, H., Hruby, A., Schneider, M.: J. Crystal Growth 3/4, 305 (1968)
Besselere, J. P., Le Duc, J. M.: Mat. Res. Bull. 3, 797 (1968)
Kaneko, K. et al.: Proc. IEEE 61, 884 (1973)
Poiblaud, G., Jacob, G.: Mat. Res. Bull. 8, 845 (1973)
Gillessen, K., Marshall, A. J.: J. Crystal Growth 32, 216 (1976)
Moravec, F., Novotny, J.: J. Crystal Growth 33, 90 (1976)
Broder, J. D., Wolff, G. A.: J. Electrochem. Soc. 110, 1150 (1963)
Plaskett, T. S., Blum, S. E., Foster, L. M.: J. Electrochem. Soc. 114, 1303 (1967)
Blum, S. E., Chicotka, R. J.: J. Electrochem. Soc. 115, 298 (1968)
Blum, S. E., Chicotka, R. J., Bischoff, B. K.: J. Electrochem. Soc. 115, 324 (1968)
Blum, S. E., Chicotka, R. J.: J. Electrochem. Soc. 120, 588 (1973)
Woodbury, H. H.: J. Crystal Growth 35, 49 (1976)
Von Neida, A. R., Oster, L. J., Nielsen, J. W.: J. Crystal Growth 13/14, 647 (1972)
Frosch, C. J., Derick, L.: J. Electrochem. Soc. 108, 251 (1961)
Gillessen, K., Marshall, A. J.: unpublished
Menninger, H. et al.: Phys. Stat. Sol. (a) 48, 407 (1978)
Gillessen, K., Marshall, A. J.: J. Crystal Growth 33, 356 (1976)
Scheel, H. J.: J. Crystal Growth 13/14, 560 (1972)
Kaneko, K. et al.: J. Electrochem. Soc. 121, 556 (1974)
Gillessen, K., Marshall, A. J., Schuller, K.-H., Gramann, W.: IEEE Trans. Electron Devices ED-24, 944 (1977)
Poiblaud, G.: French Pat. 7 431 524 (1974)
Hsieh, J. J., Shen, C. C.: Appl. Phys. Lett. 30, 429 (1977)
Wagner, S. et al.: J. Crystal Growth 39, 128 (1977)
Marshall, A. J., Gillessen, K.: J. Crystal Growth 44, 651 (1978)
Panish, M. B.: J. Crystal Growth 27, 6 (1974)
Sol, N., Clariou, J. P., Linh, N. T., Moulin, M.: J. Crystal Growth 27, 325 (1974)
Yamamoto, A., Uemara, C.: Jap. J. Appl. Phys. 17, 1869 (1978)
Ito, K., Ito, H.: J. Crystal Growth 45, 248 (1978)
Marshall, A. J., Gillessen, K., Daniel, D. R.: unpublished results
Von Münch, W.: private communication
Saito, T., Seki, Y.: J. Crystal Growth 23, 217 (1974)
Archer, R. J.: J. Electr. Materials 1, 128 (1972)
Onton, A., Chicotka, R. J.: J. Appl. Phys. 41, 4205 (1970)
Foster, L. M., Scardefield, J. E.: J. Electrochem. Soc. 117, 534 (1970)
Panish, M. B.: J. Chem. Thermodynamics 2, 1301 (1970)
Burnham, R. D. et al: Appl. Phys. Lett. 17, 430 (1970)
Macksey, H. M. et al: J. Appl. Phys. 44, 1333 (1973)
Laugier, A., Chevallier, J.: Phys. Stat. Sol. (a) 7, 427 (1971)
Kato, T., Shimizu, A., Ishida, T.: Jap. J. Appl. Phys. 13, 1481 (1974)
Itoh, H., Hara, K., Tanaka, A., Sukeyaura, T.: Appl. Phys. Lett. 19, 348 (1971)
Voigt, G. et al.: Phys. Stat. Sol. (a) 36, 173 (1976)
Marshall, A. J., Gillessen, K.: J. Crystal Growth 41, 93 (1977)
Miller, J. F., Baxter, R. D.: J. Electronic Materials 2, 485 (1973)
Tajima, M., Iizuka, T.: Jap. J. Appl. Phys. 15, 651 (1976)
Iizuka, T.: J. Electrochem. Soc. 118, 1190 (1971)
Rozgonyi, G. A., von Neida, A. R., Iizuka, T., Haszko, S. E.: J. Appl. Phys. 43, 3141 (1972)
Werkhoven, C.: J. Electrochem. Soc. 125, 671 (1978)
Rozgonyi, G. A., Afromowitz, M. A.: Appl. Phys. Lett. 19, 153 (1971)
Van Vechten, J. A.: J. Electronic Materials 4, 1159 (1975)
Kaufmann, U., Schneider, J., Räuber, A.: Appl. Phys. Lett. 29, 312 (1976)
Isawa, N., Kaneko, K.: Jap. J. Appl. Phys. 18, 691 (1979)
Kaneko, K.: Jap. J. Appl. Phys. 15, 1287 (1976)
Lorenz, M. R. et al: Appl. Phys. Lett. 13, 421 (1968)
Kato, T., Matsumoto, T., Ishida, T.: Jap. J. Appl. Phys. 15, 2265 (1976)
Gillessen, K., Marshall, A. J.: 7th ESSDERC, Brighton 1977
Stringfellow, G. B., Lindquist, P. F., Burmeister, R. A.: J. Electronic Materials 1, 4 (1972)
Onton, A., Lorenz, M. R., Reuter, W.: J. Appl. Phys. 42, 3420 (1971)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1980 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Gillessen, K., Marshall, A.J., Hesse, J. (1980). Temperature Gradient Solution Growth. In: III–V Semiconductors. Crystals, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-67611-6_2
Download citation
DOI: https://doi.org/10.1007/978-3-642-67611-6_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-67613-0
Online ISBN: 978-3-642-67611-6
eBook Packages: Springer Book Archive