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Measurement of Surface Recombination Velocity in Semiconductors by Diffraction from Picosecond Transient Free Carrier Gratings

  • K. Jarašiunas
  • C. Hoffman
  • H. Gerritsen
  • A. Nurmikko
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 4)

Abstract

Accurate measurements of surface recombination velocities at semiconductor interfaces (GaAs, InP) are accomplished using picosecond transient diffraction from an optically generated free carrier plasma grating. The method is insensitive to diffusion and bulk recombination processes.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • K. Jarašiunas
    • 1
    • 2
  • C. Hoffman
    • 1
  • H. Gerritsen
    • 1
  • A. Nurmikko
    • 3
  1. 1.Department of PhysicsBrown UniversityProvidenceUSA
  2. 2.Division of EngineeringBrown UniversityProvidenceUSA
  3. 3.Department of Semiconductor PhysicsVilnius V. Kapsukas State UniversityVilniusUSSR

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