A Compact Cs-Evaporator for High Sensitivity SIMS

  • T. Okutani
  • K. Shono
  • R. Shimizu
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 9)


In recent years Cs+ primary ions have been used for high sensitivity negative secondary ion mass spectrometry (SIMS) by several workers [1,2,3,], and a Cs ion source assembly for this purpose is now commercially available. To make this ion source interchangeable with other ion sources, e.g., Ar ions, however, one has to employ a specific configuration equipped with isolation valve [3], etc. In this respect, a compact Cs evaporator which can be mounted in SIMS instruments having a duoplasmatro-type primary ion source would be of practical use as well. One can perform high sensitivity SIMS by means of this Cs evaporator which floods the sample surface with a Cs beam while the sample is bombarded with Ar ions as reported by BERNHEIM and SLODZIAN [4]. This paper describes the development of a compact Cs-ion evaporator for high sensitivity negative SIMS which is compatible with those SIMS instruments equipped with a duoplasmatron ion source.


Deposition Rate Tungsten Wire Heat Coil Isolation Valve Exit Aper 
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  1. 1.
    H.A. Storms, J.D. Stein, and K.F. Brown, Anal. Chem. 49, 2023 (1977).CrossRefGoogle Scholar
  2. 2.
    P. Williams, R.K. Lewis, C.A. Evans, Jr., and P.R. Hanley, Anal. Chem. 49, 1399 (1977).CrossRefGoogle Scholar
  3. 3.
    C.W. Magee and C.P. Wu, Nuclear Instr. and Methods 149, 529 (1978).CrossRefADSGoogle Scholar
  4. 4.
    M. Bernheim and G. Slodzian, J. Phys. 38, L-325 (1977).CrossRefGoogle Scholar
  5. 5.
    K. Goto, T. Ishikawa, T. Koshikawa, and R. Shimizu, J. Vac. Sci. Technol. 15, 1695 (1978).CrossRefADSGoogle Scholar
  6. 6.
    T. Okutani and R. Shimizu, to be presented at 40th meeting of Soc. Japan Appl. Phys. (Hokkaido, September 30–October 2, 1979).Google Scholar

Copyright information

© Springer-Verlag New York 1979

Authors and Affiliations

  • T. Okutani
    • 1
  • K. Shono
    • 1
  • R. Shimizu
    • 1
  1. 1.Department of Applied PhysicsOsaka UniversityOsakaJapan

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