Abstract
The characteristics of gallium arsenide metal semiconductor field effect transistors (MESFET’s) are mainly determined by the interface region between the epitaxial layer and the Cr-doped GaAs semi-insulating substrate. A nimber of adverse effects associated with this interface are eliminated and device performances are improved by the insertion of a high resistivity buffer layer between the substrate and the active layer. It has also been suggested that more reliable results can be obtained by doping the buffer layer with a low concentration of deep level elements such as chromium or iron for compensating the residual donor or acceptor levels.
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© 1979 Springer-Verlag New York
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Huber, A.M., Morillot, G., Merenda, P., Linh, N.T. (1979). Chromium and Iron Determination in GaAs Epitaxial Layers. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_27
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DOI: https://doi.org/10.1007/978-3-642-61871-0_27
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-61873-4
Online ISBN: 978-3-642-61871-0
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