Abstract
The ability to change the energy-level structure of the gain medium through material and structure design is a unique property of semiconductor lasers. To take full advantage of this capability, one needs to be able to predict the bandstructure that results from a particular laser heterostructure arrangement. In this chapter, we show a procedure for performing bandstructure calculations that are relevant to the laser physicist. In order to be concise, the details of the derivation of many of the formulas are left to Apps. B - D.
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References
Marzin, J.Y. (1986), Heterojunctions and Semiconductor Superlattices, eds. G. Allan, G. Bastard, and M. Yoos, Springer, Berlin, p. 161.
The spin-orbit coupling scheme is discussed, e.g., in Schiff, L. (1968), Quantum Mechanics, McGraw-Hill, New York. Chap. 12.
The experimental results in Fig. 6–14 are from Dutta, N.K., J. Wynn, D.L. Sivco, and Y. Cho (1990), Appl. Phys. Lett. 56, 2293.
For references on the composition dependence of the In1_xGaxP bandgap see, e.g., Adachi, S. (1982), J. Appl. Phys. 53, 8775.
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Some results of the many-body calculations are presented in Chow, W.W., M. Pereira, and S.W. Koch (1992), Appl. Phys. Lett. 61, 758.
Pereira, M., S.W. Koch, and W.W. Chow (1993), Journ. Opt. Soc. BIO, 765.
A large number of material parameters for many semiconductors can be found in Landolt-Börnstein (1982), Numerical Data and Functional Relationships in Science and Technology, ed. K.H. Hellwege, Vol. 17 Semiconductors, edited by O. Madelung, M. Schulz and H. Weiss, Springer Verlag, Berlin.
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© 1994 Springer-Verlag Berlin Heidelberg
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Chow, W.W., Koch, S.W., Sargent, M. (1994). Band Mixing and Strain in Quantum Wells. In: Semiconductor-Laser Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61225-1_6
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DOI: https://doi.org/10.1007/978-3-642-61225-1_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-64752-9
Online ISBN: 978-3-642-61225-1
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