Novel Structure Model for the Type C Defect on Si(001) Surface

Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 121)

Abstract

A novel structure model for the type C defect on Si(001) is proposed. The model is based on the assumption that the type C defect is originated from a removal of only one atom in the second layer and not a removal of two atoms on the surface. Optimized structure obtained from the first principles calculation reproduces STM images both at negative and positive sample biases.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • T. Uda
    • 1
  1. 1.Joint Research Center for Atom TechnologyIbarakiJapan

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