Novel Structure Model for the Type C Defect on Si(001) Surface
A novel structure model for the type C defect on Si(001) is proposed. The model is based on the assumption that the type C defect is originated from a removal of only one atom in the second layer and not a removal of two atoms on the surface. Optimized structure obtained from the first principles calculation reproduces STM images both at negative and positive sample biases.
Unable to display preview. Download preview PDF.
- K. C. Pandy, Proc. 7 th Intxonf. on the physics of semiconductors, ed. D. J. Chadi and W. A. Harrison (Springer Verlag, New York, 1985).Google Scholar
- Yolotsuka and I. Sumita, Ultramicroscopy 42–44 946 (1992).Google Scholar
- M. Udagawa, Y. Umetani, H. Tanaka, M. Itoh, T. Uchiyama, Y. Watanabe, T.Google Scholar
- T. Miyazaki, T. Uda, and K. Terakura, EMRS, Spring Meeting 1995.Google Scholar