Abstract
We briefly review various models for the diffusion of impurity atoms in silicon and subject some of them to further numerical and analytical investigations. Similar work is done with respect to the thermal oxidation of silicon. We study the interplay between both processes, leading to segregation at a moving interface in a system with volume change. Special attention is paid to the importance of spatial dimension in that context. Concluding remarks sketch problems appearing with the simulation of dopant diffusion in poly crystalline silicon.
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© 1997 Springer-Verlag Berlin Heidelberg
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Hoffmann, KH., Bauer, HJ., Wilczok, E., Lorenz, J. (1997). Mehrdimensionale Simulation von Hochtemperaturprozessen in der Siliziumtechnologie. In: Hoffmann, KH., Jäger, W., Lohmann, T., Schunck, H. (eds) Mathematik Schlüsseltechnologie für die Zukunft. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-60550-5_25
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DOI: https://doi.org/10.1007/978-3-642-60550-5_25
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