The Utility of Modeling and Simulation in Determining Transport Performance Properties of Semiconductors

  • Bernardo Cockburn
  • Joseph W. Jerome
  • Chi-Wang Shu
Conference paper
Part of the Lecture Notes in Computational Science and Engineering book series (LNCSE, volume 11)


The RKDG method has been effectively used in modeling and simulating semiconductor devices, where the underlying models are hydrodynamic in nature. These include classical as well as quantum models. In this paper, we survey and interpret some of these results. For classical transport, we review the simulation of a benchmark MESFET transistor by means of discontinuous Galerkin methods of degree one. For quantum transport, we report the success in simulation of the resonant tunneling diode. The principal features here are negative differential resistance and hysteresis.


Hydrodynamic Model Discontinuous Galerkin Discontinuous Galerkin Method Negative Differential Resistance Numerical Flux 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • Bernardo Cockburn
    • 1
  • Joseph W. Jerome
    • 2
  • Chi-Wang Shu
    • 3
  1. 1.Department of MathematicsUniversity of MinnesotaMinneapolisUSA
  2. 2.Department of MathematicsNorthwestern UniversityEvanstonUSA
  3. 3.Division of Applied MathematicsBrown UniversityProvidenceUSA

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