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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 32))

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Abstract

As the name suggests, a p-n junction depicts the combination of two semiconductors having n- and p-type conductivities. If the two semiconductors forming the junction are of the same crystal, the term homojunction is used to describe the resulting structure. On the other hand, if two different semiconductors with very similar structural, but varying electrical and optical properties are used, the term heterojunction is applied. In modern LEDs and lasers, heterojunctions are employed for a variety of purposes which include carrier injection, and carrier and light confinement. In fact, before the advent of heterojunctions many optoelectronic and electronic devices were not possible among which was the CW (Continuous Wave) RT (Room Temperature) laser. Being such an integral part of lasers and LEDs, a concise description of the principles of p-n junctions and their characteristics is warranted. Detailed descriptions of heterojunction properties can be found elsewhere [9.1].

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© 1999 Springer-Verlag Berlin Heidelberg

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Morkoç, H. (1999). The p-n Junction. In: Nitride Semiconductors and Devices. Springer Series in Materials Science, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58562-3_9

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  • DOI: https://doi.org/10.1007/978-3-642-58562-3_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-63647-9

  • Online ISBN: 978-3-642-58562-3

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