Abstract
When impurities such as donors and acceptors are introduced into a semiconductor, they produce levels within the energy gap. The energy of a level with respect to the edge of the conduction band in the case of donors, and the valence band in the case of acceptors is called the ionization energy. The simplest calculation of an impurity energy level is based on the hydrogenic model.
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© 1999 Springer-Verlag Berlin Heidelberg
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Morkoç, H. (1999). Determination of Impurity and Carrier Concentrations. In: Nitride Semiconductors and Devices. Springer Series in Materials Science, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58562-3_7
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DOI: https://doi.org/10.1007/978-3-642-58562-3_7
Publisher Name: Springer, Berlin, Heidelberg
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