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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 32))

Abstract

For the last three decades or so, the III–V semiconductor nitride system has been viewed as highly promising for semiconductor device applications for blue and ultraviolet wavelengths in much the same manner that its highly successful As-based and P-based counterparts have been exploited for infrared, red, and yellow wavelengths. The wurtzite polytypes of GaN, AlN and InN form a continuous alloy system whose direct bandgaps range from 1.9 eV for InN, to 3.4 eV for GaN, and to 6.2 eV for AlN. For all practical purposes, the III–V nitrides could potentially be fabricated into optical devices which are active at wavelengths ranging from the green well into the ultraviolet. By using nitride emitters as pumps, all primary and mixed colors can be obtained, too.

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© 1999 Springer-Verlag Berlin Heidelberg

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Morkoç, H. (1999). Introduction. In: Nitride Semiconductors and Devices. Springer Series in Materials Science, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-58562-3_1

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  • DOI: https://doi.org/10.1007/978-3-642-58562-3_1

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-63647-9

  • Online ISBN: 978-3-642-58562-3

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