Abstract
Over the past two decades, infrared absorption spectroscopy (IRAS) has emerged as a preeminent technique for studying semiconductor surface and interface passivation [1]. For example, it has played a central role in identifying the nature of the HF induced passivation by hydrogen of Si surfaces [2–6] and, more recently, in describing the microscopic mechanism of surface oxidation [7–9]. In such studies not only can the nature of the surface termination (SiHx,(x=1–3), or SiOx,(x=0–2)) be determined, but the orientation of the various species can also be quantified, thus providing structural as well as chemical information. At present, IRAS exhibits sufficiently high sensitivity that it is possible to detect as little as 1% of a hydrogen monolayer. This effectively allows the characterization of minority surface species (steps, defects) as well as of the majority surface termination. In addition, the high spectral resolution afforded by IRAS can be utilized to distinguish subtle differences in chemical environment (due to the presence of dangling bonds, for example) and to unravel complex dynamical effects, such as coupling between isolated surface modes and the substrate phonons or electrons.
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Chabal, Y.J., Weldon, M.K., Queeney, K.T., Estève, A. (2001). Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_8
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DOI: https://doi.org/10.1007/978-3-642-56711-7_8
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